10-Ethoxy-9,9-dimethyldecan-1-amine

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 10-Ethoxy-9,9-dimethyldecan-1-amine
• 化学式: C₁₄H₃₁NO
• 分子量: 229.4
• InChiKey: YZDDMFFTOVVVMX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  16
• 可旋转键数：
  11
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  35.2
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE
  申请人：Versum Materials US, LLC

  公开号：EP3422392A1

  公开（公告）日：2019-01-02

  Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

  本文描述的蚀刻溶液由水、磷酸溶液（水溶液）和含羟基的溶剂组成。这种组合物适用于在微电子设备制造过程中选择性地去除氮化硅和氧化硅。
• ETCHING SOLUTION HAVING SILICON OXIDE CORROSION INHIBITOR AND METHOD OF USING THE SAME
  申请人：Versum Materials US, LLC

  公开号：EP3666852A2

  公开（公告）日：2020-06-17

  Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound ; and optionally, a surfactant.

  本文描述了一种蚀刻溶液，适用于从微电子设备中选择性去除氧化硅上的多晶硅，该溶液包括水；至少一种氢氧化季铵盐化合物；可选的至少一种烷醇胺化合物；水混溶溶剂；至少一种选自 C4-12 烷基胺、多烷亚胺、多胺、含氮杂环化合物、含氮芳香族化合物或含氮杂环和芳香族化合物的含氮化合物；以及可选的表面活性剂。
• Post-CMP removal using compositions and method of use
  申请人：ENTEGRIS, INC.

  公开号：US10176979B2

  公开（公告）日：2019-01-08

  An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

  一种无胺组合物和工艺，用于清洗微电子器件上的化学机械抛光（CMP）后残留物和污染物。无胺组合物最好包括至少一种氧化剂、至少一种络合剂、至少一种碱性化合物和水，pH 值在 2.5 到 11.5 之间。该组合物能高效清洗微电子器件表面的 CMP 后残留物和杂质材料，而不会损害低 K 介电材料或铜互连材料。
• Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
  申请人：Versum Materials US, LLC

  公开号：US10879076B2

  公开（公告）日：2020-12-29

  Described herein is an etching solution comprising water; oxidizer; water-miscible organic solvent; fluoride ion source; and optionally, surfactant. Such compositions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.

  本文描述的蚀刻溶液由水、氧化剂、水溶性有机溶剂、氟离子源和可选的表面活性剂组成。这种组合物适用于在制造过程中选择性地去除微电子设备中的多晶硅上的硅锗。
• Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
  申请人：Versum Materials US, LLC

  公开号：US10934484B2

  公开（公告）日：2021-03-02

  Described herein is an etching solution comprising water; an oxidizer; a water-miscible organic solvent; a fluoride ion source; a corrosion inhibitor and optionally, a surfactant, optionally a buffer, optionally a chelating agent. Such compositions are useful for the selective removal of silicon-germanium over germanium from a microelectronic device having such material(s) thereon during its manufacture.

  本文描述的蚀刻溶液包含水、氧化剂、水溶性有机溶剂、氟离子源、腐蚀抑制剂、表面活性剂、缓冲剂、螯合剂。这种组合物适用于在制造过程中选择性地去除微电子设备上的硅锗材料。