2,4-Dihydroxyadamantane | 19213-99-1

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2,4-Dihydroxyadamantane
• 英文别名: Adamantan-2,4-diol；2a,4a-Dihydroxyadamantan；2,4-Adamantandiol；Tricyclo[3.3.1.1(3,7)]decane-2,4-diol；adamantane-2,4-diol
• CAS: 19213-99-1
• 化学式: C₁₀H₁₆O₂
• 分子量: 168.236
• InChiKey: PBWYCJIFRBPVPW-UHFFFAOYSA-N

物化性质

• 沸点：
  344.8±10.0 °C(Predicted)
• 密度：
  1.260±0.06 g/cm3(Predicted)
• 保留指数：
  1609;1616;1623;1609;1616

计算性质

• 辛醇/水分配系数(LogP)：
  0.8
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,4-Dihydroxyadamantane 、 aluminum isopropoxide 生成 2,4-Adamantanediol
  参考文献：
  名称：

  KAUFMANN, D.;MEIJERE, A.;LUK, K.;OVERTON, K.;STOTHERS, J. B., TETRAHEDRON, 1982, 38, N 7, 977-989

  摘要：

  DOI：
• 作为产物：
  描述：

  三环[4.3.1.03,8]癸-4-烯 生成 2,4-Dihydroxyadamantane
  参考文献：
  名称：

  酯热解过程中的1,3-消除并重排。制备原金刚烷和2,4-二氢金刚烷的简单方法

  摘要：

  将2-金刚烷基甲烷-或甲苯-对磺酸酯热解（16），以95％的产率提供原金刚烷（17）和2,4-二氢金刚烷（18）的混合物（2：3）。（17）的硼氢化产生4-[（（20），（21）]和5-[（24），（25）]原金刚烷醇的混合物。原金刚烷的环氧化得到外-（26）和内-（27）的混合物（6∶1 ），使前者自发地重排成2a，4a-二羟基金刚烷（28）。Protoadamantan -5-酮（23）用氢化铝锂给出了一个95:5内：外醇混合物，但锂-氨给出70：23出：内切醇。

  DOI：

  10.1039/p19720002533

文献信息

• Method for Producing Substituted Diamantanes
  申请人：Schreiner Peter R.

  公开号：US20100036153A1

  公开（公告）日：2010-02-11

  The invention at hand provides at least dinitroxylated diamantanes. In addition, it provides methods for producing substituted diamantanes with high yields and selectivity. According to the invention, dinitroxylated diamantanes are suitable for being reacted with nucleophiles to form the corresponding disubstituted diamantanes. Surprisingly, it was discovered that at least dinitroxylated or hydroxylated diamantanes are rearranged in the presence of a strong acid, creating at least 4,9-nitroxylated or hydroxylated diamantanes. On the basis of this, 4,9-substituted diamantanes are able to be produced in a targeted manner by reaction with further nucleophiles. Thus, the invention at hand provides the following methods according to the present invention for producing at least disubstituted diamantanes: a) at least dinitroxylation, followed by the substitution of all nitroxy groups by a nucleophile or b) at least dinitroxylation, subsequent rearrangement in the presence of a strong acid, after realised rearrangement all nitroxy groups are replaced by a nucleophile or c) at least dinitroxylation, subsequent reaction with water (as nucleophile), rearrangement of the at least dihydroxylated compound in the presence of a strong acid, after realised rearrangement all hydroxy groups are replaced by another nucleophile.

  该发明提供至少二硝基化二莽烷。此外，它提供了一种高产率和选择性生产取代二莽烷的方法。根据该发明，二硝基化的二莽烷适合与亲核试剂反应，形成相应的二取代二莽烷。令人惊讶的是，在强酸存在的情况下发现，至少二硝基化或羟基化的二莽烷会重排，形成至少4,9-硝基化或羟基化的二莽烷。基于此，通过与进一步的亲核试剂反应，可以有针对性地生产4,9-取代的二莽烷。因此，该发明提供了以下根据本发明的方法，用于生产至少二取代的二莽烷：a) 至少二硝基化，然后用亲核试剂替换所有硝基团或b) 至少二硝基化，后在强酸存在下重排，重排后用亲核试剂替换所有硝基团或c) 至少二硝基化，后与水（作为亲核试剂）反应，在强酸存在下重排，重排后用另一亲核试剂替换所有羟基。
• [EN] ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN WITH THE COMPOSITION<br/>[FR] COMPOSITION DE RÉSINE SENSIBLE AUX RAYONS ACTINIQUES OU AU RAYONNEMENT ET PROCÉDÉ DE FORMATION DE MOTIFS AU MOYEN DE LA COMPOSITION
  申请人：FUJIFILM CORP

  公开号：WO2010035905A1

  公开（公告）日：2010-04-01

  An actinic ray-sensitive or radiation-sensitive resin composition comprising any of the compounds of general formula (I) below; wherein: Ar represents an aromatic ring that may have a substituent other than the -(A-B) groups; n is an integer of 1 or greater; A represents any one, or a combination of two or more members selected from a single bond, an alkylene group, -O-, -S-, -C(=O)-, -S(=O)-, -S(=O)?2- and OS(=O)2-, provided that -C(=O)O- is excluded; B represents a group containing a hydrocarbon group having 4 or more carbon atoms wherein either a tertiary or a quaternary carbon atom is contained, when n is 2 or greater, the two or more -(A-B) groups may be identical to or different from each other; and M+ represents an organic onium ion.

  一种光化学射线敏感性或辐射敏感性树脂组合物，包括下面的通式(I)中的任何一种化合物；其中：Ar代表可能具有除了-(A-B)基团之外的取代基的芳香环；n为大于等于1的整数；A代表从单键、烷基基团、-O-、-S-、-C(=O)-、-S(=O)-、-S(=O)2-和OS(=O)2-中选取的任意一个或两个以上成员的组合，但不包括-C(=O)O-；B代表含有4个或更多碳原子的烃基团的基团，当n大于等于2时，两个或更多个-(A-B)基团可以相同或不同；M+代表有机离子。
• RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND
  申请人：KAMIMURA Sou

  公开号：US20090042124A1

  公开（公告）日：2009-02-12

  A resist composition includes (A) a compound represented by the following formula (I): wherein each of R 1 to R 13 independently represents a hydrogen atom or a substituent, provided that at least one of R 1 to R 13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X − represents an anion containing a proton acceptor functional group.

  一种抗性组合物包括(A)由以下公式（I）所代表的化合物：其中R1至R13中的每一个独立地代表氢原子或取代基，前提是R1至R13中至少有一个是含有醇羟基的取代基；Z代表单键或二价连接基团；X-代表含有质子受体功能基团的阴离子。
• Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same
  申请人：Takemoto Ichiki

  公开号：US20050266351A1

  公开（公告）日：2005-12-01

  The present invention provides a chemically amplified positive resist composition comprising (A) a resin which comprises (i) a structural unit of the formula (I) and (ii) at least one structural unit selected from the group consisting of structural units of the formulas (II), (III), (IV) and (V) and (B) an acid generator. The present invention further provides a novel monomers useful for the resist composition, and process for the monomers and the compositions.

  本发明提供了一种化学增感正性光阻组合物，包括(A)树脂，该树脂包括(i)公式(I)的结构单元和(ii)选自结构单元组的至少一个结构单元，所述结构单元组包括公式(II)、(III)、(IV)和(V)的结构单元，以及(B)酸发生剂。本发明还提供了一种新型单体，可用于制备光阻组合物，以及单体和组合物的制备方法。
• Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
  申请人：Kawanishi Yasutomo

  公开号：US20060194147A1

  公开（公告）日：2006-08-31

  The invention provides a resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a compound for use in the resist composition and a pattern forming method using the resist composition, which are a resist composition comprising (A) a sulfonium salt represented by the following formula (I); and a pattern forming method using the resist composition: wherein R 1 represents an alkyl group or an aryl group, R 2 to R 9 each independently represents a hydrogen atom or a substituent and may combine with each other to form a ring, Z represents an electron-withdrawing divalent linking group, X n− represents an n-valent anion, n represents an integer of 1 to 3, and m represents the number of anions necessary for neutralizing the electric charge.

  该发明提供了一种用于半导体（例如IC）、液晶电路基板、热敏头等的制造工艺或其他光刻制造工艺中使用的抗蚀剂组成物，以及用于该抗蚀剂组成物的化合物和图案形成方法。该抗蚀剂组成物包括以下式（I）所表示的磺酸盐（A）；以及使用该抗蚀剂组成物的图案形成方法：其中，R1表示烷基或芳基，R2至R9各自独立地表示氢原子或取代基，并且它们可以结合在一起形成环，Z表示电子吸引性双价连接基团，Xn-表示n价阴离子，n表示1至3的整数，m表示中和电荷所需的阴离子数。