Tris(β-hydroxyaethyl)sulfonium | 44910-50-1

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: Tris(β-hydroxyaethyl)sulfonium
• 英文别名: tris-(2-hydroxy-ethyl)-sulfonium hydroxide；Tris-(2-hydroxy-aethyl)-sulfoniumhydroxyd；Tris(2-hydroxyethyl)sulfanium
• CAS: 44910-50-1
• 化学式: C₆H₁₅O₃S
• 分子量: 167.249
• InChiKey: UCDCANRDHNHXOF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.2
• 重原子数：
  10
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  61.7
• 氢给体数：
  3
• 氢受体数：
  3

文献信息

• POLYOLEFIN POLYMER HAVING POLAR GROUP, METHOD FOR PRODUCTION THEREOF, AND WATER DISPERSION MATERIAL AND MOLD RELEASE AGENT COMPOSITION
  申请人：Mitsui Chemicals, Inc.

  公开号：EP2166027B1

  公开（公告）日：2015-06-10
• PLANOGRAPHIC PRINTING PLATE MATERIAL, PLANOGRAPHIC PRINTING PLATE, PLANOGRAPHIC PRINTING PLATE PREPARING PROCESS AND PRINTING PROCESS EMPLOYING PLANOGRAPHIC PRINTING PLATE
  申请人：Sampei Takeshi

  公开号：US20090110832A1

  公开（公告）日：2009-04-30

  The present invention provides an intermediate transfer member having higher transferability and higher cleaning properties and durability, an apparatus for producing an intermediate transfer member which does not require the provision of any large equipment such as vacuum equipment, and an image forming apparatus comprising the intermediate transfer member. The intermediate transfer member contains a support and, provided on the support, a first inorganic compound layer containing carbon atoms and a second inorganic compound layer as a surface layer, the second inorganic compound layer not containing any carbon atom or containing carbon atoms in a smaller amount than the carbon atoms in the first inorganic compound layer.
• COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE
  申请人：LEE Wai Mun

  公开号：US20120083436A1

  公开（公告）日：2012-04-05

  The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization.
• PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160041465A1

  公开（公告）日：2016-02-11

  The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).