Method for development processing of silver halide photographic
申请人:Fuji Photo Film Co., Ltd.
公开号:US05192647A1
公开(公告)日:1993-03-09
A method for development processing of a light-sensitive silver halide photographic material comprising a support having provided thereon at least one surface latent image type silver halide emusion layer, in the presence of a compound represented by formula (I) ##STR1## wherein Q, X, A, B, M, m and n are as defined above. The method prevents generation of developer fog without reducing sensitivity.
Superhigh contrast negative-type silver halide photographic material
申请人:Fuji Photo Film Co., Ltd.
公开号:US04851321A1
公开(公告)日:1989-07-25
A superhigh contrast negative type silver halide photographic material comprising a support having provided thereon at least one silver halide emulsion layer, the emulsion layer or at least one other hydrophilic colloid layer containing at least one hydrazine derivative and at least one compound of formula (I): Y[(X).sub.n A-B].sub.m (I) wherein Y represents a group capable of adsorbing to silver halide; X represents a divalent linking group comprising an atom or atoms selected from a hydrogen atom, a carbon atom, a nitrogen atom, an oxygen atom and a sulfur atom or an atomic group comprised of the atoms; A represents a divalent linking group; B represents a substituted or unsubstituted amino group, an ammonium group or a nitrogen-containing heterocyclic group; m represents 1, 2 or 3; and n represents 0 or 1. The photographic material may contain an organic desensitizer and a water-soluble rhodium salt, and the material has a low sensitivity and can be handled in a bright room.
The present invention relates to compounds of Formula (I)
or a pharmaceutically acceptable salt thereof; processes for the preparation of the compounds; intermediates used in the preparation of the compounds; compositions containing the compounds; and uses of the compounds in treating diseases or conditions associated with fatty acid amide hydrolase (FAAH) activity.
Metal polishing slurry and chemical mechanical polishing method
申请人:Yoshikawa Masaru
公开号:US20100075500A1
公开(公告)日:2010-03-25
The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X
1
)
n
-L wherein X
1
represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X
1
s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).