Inosine 5'-sulfate | 70023-32-4

• 分子结构分类: 有机化合物 - 核苷、核苷酸和类似物 - 嘌呤核苷
• 英文名称: Inosine 5'-sulfate
• 英文别名: [(2R,3S,4R,5R)-3,4-dihydroxy-5-(6-oxo-1H-purin-9-yl)oxolan-2-yl]methyl hydrogen sulfate
• CAS: 70023-32-4
• 化学式: C₁₀H₁₂N₄O₈S
• 分子量: 348.29
• InChiKey: IGYLPKLXFDOQGM-KQYNXXCUSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -2.67
• 重原子数：
  23
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  184
• 氢给体数：
  4
• 氢受体数：
  9

反应信息

• 作为产物：
  描述：

  [(2R,3S,4R,5R)-3,4-dihydroxy-5-(6-oxo-1H-purin-9-yl)oxolan-2-yl]methyl sulfate;pyridin-1-ium 以91的产率得到Inosine 5'-sulfate
  参考文献：
  名称：

  [EN] INOSINE COMPOUNDS AND THEIR USE FOR TREATING OR PREVENTING AN INFLAMATION OR A REPERFUSION DISEASE
  [FR] COMPOSES D'INOSINE ET LEURS UTILISATIONS POUR LE TRAITEMENT OU LA PREVENTION D'UNE INFLAMMATION OU D'UNE MALADIE DE REPERFUSION

  摘要：

  本发明揭示了肌苷化合物、包含肌苷化合物的组合物以及治疗或预防炎症性疾病或再灌注性疾病的方法，其中包括向需要的患者施用有效量的肌苷化合物。

  公开号：

  WO2002076400A2

文献信息

• Inosine compounds and their use for treating or preventing an inflamation or a reperfusion disease
  申请人：Inotek Pharmaceuticals Corporation

  公开号：US20030040502A1

  公开（公告）日：2003-02-27

  Inosine compounds, compositions comprising an inosine compound and methods for treating or preventing an inflammation disease or a reperfusion disease comprising administering an effective amount of an inosine compound to a patient in need thereof are disclosed.

  本发明揭示了肌苷化合物、包含肌苷化合物的组合物以及治疗或预防炎症疾病或再灌注疾病的方法，其中将有效量的肌苷化合物给予需要治疗的患者。
• Method and composition for modulating an immune response
  申请人：——

  公开号：US20010053763A1

  公开（公告）日：2001-12-20

  Disclosed is a method of inhibiting or preventing a condition associated with undesired secretion of a macrophage inflammatory protein using inhibitors of ATP-sensitive K + -channels, inhibitors of the Na + /H + antiporter, inosine, or inosine analogs.

  本发明公开了一种方法，该方法利用 ATP 敏感性 K &plus； -通道的抑制剂、Na &plus； /H &plus； 反转运体、肌苷或肌苷类似物的抑制剂。
• Methods for forming line patterns in semiconductor substrates
  申请人：——

  公开号：US20030054292A1

  公开（公告）日：2003-03-20

  A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

  一种在半导体衬底上形成精细图案的方法，在半导体衬底上的待蚀刻目标层上涂覆抗蚀剂组合物，抗蚀剂组合物包括至少一种能通过光刻工艺形成光刻胶图案的化合物和一种自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物玻璃转化温度的温度下通过热处理分解。在抗蚀剂化合物层上进行光刻处理，以形成光刻胶图案。将具有光刻胶图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化温度，其中抗蚀剂成分发生部分交联反应。
• Inosine compounds and their use for treating or preventing an inflammation or reperfusion disease
  申请人：Salzman L. Andrew

  公开号：US20050014715A1

  公开（公告）日：2005-01-20

  Inosine compounds, compositions comprising an inosine compound and methods for treating or preventing an inflammation disease or a reperfusion disease comprising administering an effective amount of an inosine compound to a patient in need thereof are disclosed.

  本发明公开了肌苷化合物、包含肌苷化合物的组合物以及治疗或预防炎症疾病或再灌注疾病的方法，这些方法包括向有需要的患者施用有效量的肌苷化合物。
• Resist compositions including thermal crosslinking agents
  申请人：Choi Sang-jun

  公开号：US20050026078A1

  公开（公告）日：2005-02-03

  A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

  一种在半导体衬底上形成精细图案的方法，在半导体衬底上的待蚀刻目标层上涂覆抗蚀剂组合物，抗蚀剂组合物包括至少一种能通过光刻工艺形成光刻胶图案的化合物和一种自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物玻璃转化温度的温度下通过热处理分解。在抗蚀剂化合物层上进行光刻处理，以形成光刻胶图案。将具有光刻胶图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化温度，其中抗蚀剂成分发生部分交联反应。