1,3-bis(4-azidophenyl)propane | 1574538-09-2

• 分子结构分类: 有机化合物 - 苯丙烷和聚酮 - 直链 1,3-二芳基丙烷
• 英文名称: 1,3-bis(4-azidophenyl)propane
• 英文别名: 1-Azido-4-[3-(4-azidophenyl)propyl]benzene
• CAS: 1574538-09-2
• 化学式: C₁₅H₁₄N₆
• 分子量: 278.316
• InChiKey: LPEBYQOZRRQZTJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.5
• 重原子数：
  21
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.2
• 拓扑面积：
  28.7
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  1,3-bis(4-azidophenyl)propane 、 在 potassium fluoride 、 tetrakis(actonitrile)copper(I) hexafluorophosphate 、 铜 、 N,N-二异丙基乙胺 作用下， 以 甲醇 、 二氯甲烷 为溶剂， 反应 48.0h， 以77%的产率得到(μ-1,3-bis{4-[4-(2,2′-bipyridine-5-yl)-1H-1,2,3-triazol-1-yl]phenyl}propane)tetrakis(4-hexylphenylethynyl)diplatinum(II)
  参考文献：
  名称：

  Tracking Intramolecular Interactions in Flexibly Linked Binuclear Platinum(II) Complexes

  摘要：

  In this work we describe the synthesis and the photophysical and electrochemical characterization of binuclear Pt-11 complexes. Using a modular click chemistry approach, we decorated different flexible bridging units with (bpy)Pt-II bisacetylides (bpy = 2,2'-bipyridine). Intramolecular excimer formation originating from Pt-II-Pt-II and pi-pi interactions was investigated by steady-state and time-resolved emission spectroscopy in dilute solution. We observed that linkers bringing the metallic centers in close proximity favor both ground-state coupling and excimer formation. These interactions lead to changes in the photophysical and electrochemical properties, which can be tuned by the choice of solvent.

  DOI：

  10.1021/om4004237
• 作为产物：
  描述：

  1,3-bis(4-bromophenyl)propane 在 copper(l) iodide 、 sodium azide 、 sodium ascorbate 、 N,N'-二甲基乙二胺 作用下， 以 乙醇 、 水 为溶剂， 反应 4.5h， 以76%的产率得到1,3-bis(4-azidophenyl)propane
  参考文献：
  名称：

  Tracking Intramolecular Interactions in Flexibly Linked Binuclear Platinum(II) Complexes

  摘要：

  In this work we describe the synthesis and the photophysical and electrochemical characterization of binuclear Pt-11 complexes. Using a modular click chemistry approach, we decorated different flexible bridging units with (bpy)Pt-II bisacetylides (bpy = 2,2'-bipyridine). Intramolecular excimer formation originating from Pt-II-Pt-II and pi-pi interactions was investigated by steady-state and time-resolved emission spectroscopy in dilute solution. We observed that linkers bringing the metallic centers in close proximity favor both ground-state coupling and excimer formation. These interactions lead to changes in the photophysical and electrochemical properties, which can be tuned by the choice of solvent.

  DOI：

  10.1021/om4004237

文献信息

• Negative resist composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP1684118A1

  公开（公告）日：2006-07-26

  A negative resist composition is provided comprising a polymer comprising recurring units having formula (1), a photoacid generator, and a crosslinker. In formula (1), X is alkyl or alkoxy, R1 and R2 are H, OH, alkyl, substitutable alkoxy or halogen, R3 and R4 are H or CH3, n is an integer of 1 to 4, m and k are an integer of 1 to 5, p, q and r are positive numbers. The composition has a high contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution and good etching resistance.

  本发明提供了一种阴性抗蚀剂组合物，该组合物包括由具有式（1）的递归单元组成 的聚合物、光酸发生器和交联剂。式（1）中，X 是烷基或烷氧基，R1 和 R2 是 H、OH、烷基、可取代的烷氧基或卤素，R3 和 R4 是 H 或 CH3，n 是 1 至 4 的整数，m 和 k 是 1 至 5 的整数，p、q 和 r 是正数。该组合物曝光前后的碱溶解率对比度高，灵敏度高，分辨率高，抗蚀刻性好。
• Patterning process using a negative resist composition
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP1684118B1

  公开（公告）日：2012-04-18
• Negative resist material and pattern formation method using the same
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20040023151A1

  公开（公告）日：2004-02-05

  A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance. 1
• US6861198B2
  申请人：——

  公开号：US6861198B2

  公开（公告）日：2005-03-01