New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
                            本发明提供了可用于浸没式光刻技术的新型光阻组合物。本发明的优选光刻胶组合物包括两种或两种以上不同的材料,这些材料基本上不能与抗蚀剂的
树脂成分混合。特别优选的本发明光刻胶可以减少光刻胶材料在浸入光刻处理过程中浸入接触光刻胶层的浸入液中。