THIN FILM TRANSISTORS WITH POLY(ARYLENE ETHER) POLYMERS AS GATE DIELECTRICS AND PASSIVATION LAYERS
申请人:Kretz Peck Christine
公开号:US20070296047A1
公开(公告)日:2007-12-27
The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure:
—(O—Ar
1
—O—Ar
2
—O—)
m
—(—O—Ar
3
—O—Ar
4
—O)
n
—
where Ar
1
, Ar
2
, Ar
3
, and Ar
4
are identical or different aryl radicals, m is 0 to 1, n is 1−m, and at least one of the aryl radicals is grafted to the backbone of the polymer