A process for chemical mechanical polishing a substrate containing tungsten to at least reduce dishing of tungsten features of 100 μm or less. The process includes providing a substrate containing tungsten features of 100 μm or less; providing a polishing composition, containing, as initial components: water; an oxidizing agent; arginine or salts thereof; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and, optionally, a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and yet at least reducing dishing of the tungsten features of 100 μm or less.
一种对含
钨基底进行
化学机械抛光以至少减少 100 μm 或以下
钨特征的分层的工艺。该工艺包括提供含有 100 μm 或更小
钨特征的基底;提供抛光组合物,作为初始成分,该组合物含有
水;氧化剂;精
氨酸或其盐;二
羧酸;
铁离子源;胶体
二氧化硅磨料;可选的 pH 值调节剂;可选的表面活性剂;可选的杀菌剂;提供具有抛光表面的
化学机械抛光垫;在抛光垫和基底之间的界面处产生动态接触;以及在抛光垫和基底之间的界面处或其附近将抛光组合物分配到抛光表面上;其中部分
钨被抛光离开基底,但至少减少了 100 μm 或更小的
钨特征的分层。