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5-[3,4,5-Trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxyoxane-2,3,4,6-tetrol

中文名称
——
中文别名
——
英文名称
5-[3,4,5-Trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxyoxane-2,3,4,6-tetrol
英文别名
——
5-[3,4,5-Trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxyoxane-2,3,4,6-tetrol化学式
CAS
——
化学式
C11H20O11
mdl
——
分子量
328.27
InChiKey
AEMSWCDOLCCMHZ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    -4.6
  • 重原子数:
    22
  • 可旋转键数:
    3
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    190
  • 氢给体数:
    8
  • 氢受体数:
    11

文献信息

  • COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20150004791A1
    公开(公告)日:2015-01-01
    The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.
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