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spiro[fluorene9,9'-xanthene]-2,7-diylbis(diphenylphosphine oxide) | 1346002-81-0

中文名称
——
中文别名
——
英文名称
spiro[fluorene9,9'-xanthene]-2,7-diylbis(diphenylphosphine oxide)
英文别名
Spiro[fluorene-9,9'-xanthene]-2,7-diylbis(diphenylphosphineoxide);2,7-bis(diphenylphosphoryl)spiro[fluorene-9,9'-xanthene]
spiro[fluorene9,9'-xanthene]-2,7-diylbis(diphenylphosphine oxide)化学式
CAS
1346002-81-0
化学式
C49H34O3P2
mdl
——
分子量
732.755
InChiKey
BFPBFISLGKUIFF-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    10.5
  • 重原子数:
    54
  • 可旋转键数:
    6
  • 环数:
    10.0
  • sp3杂化的碳原子比例:
    0.02
  • 拓扑面积:
    43.4
  • 氢给体数:
    0
  • 氢受体数:
    3

反应信息

  • 作为反应物:
    描述:
    spiro[fluorene9,9'-xanthene]-2,7-diylbis(diphenylphosphine oxide)tris-(dibenzylideneacetone)dipalladium(0)N-溴代丁二酰亚胺(NBS)三叔丁基膦caesium carbonate溶剂黄146 作用下, 以 甲苯 为溶剂, 生成 spiro[fluorene-9,9’-xanthene]-2,7-diylbis(diphenylphosphine oxide)-2’,7’-diylbis(N,N-di(4-methyldiphenylamine))
    参考文献:
    名称:
    [EN] SPIRO-(FLUORENE-9,9'-(THIO)XANTHENES)
    [FR] SPIRO-(FLUORÈNE-9,9'-(THIO)XANTHÈNES)
    摘要:
    The invention relates to spiro-(fluorene-9,9'-(thio)xanthene)-based compounds (I) and a process for the preparation of these. The compounds are useful as thermally activated delayed fluorescence material in electroluminescent devices such as organic light-emitting diodes (OLEDs). The invention extends to electroluminescent devices comprising one or more of these compounds as an emitter and a host material.
    公开号:
    WO2022269257A1
  • 作为产物:
    参考文献:
    名称:
    [EN] SPIRO-(FLUORENE-9,9'-(THIO)XANTHENES)
    [FR] SPIRO-(FLUORÈNE-9,9'-(THIO)XANTHÈNES)
    摘要:
    The invention relates to spiro-(fluorene-9,9'-(thio)xanthene)-based compounds (I) and a process for the preparation of these. The compounds are useful as thermally activated delayed fluorescence material in electroluminescent devices such as organic light-emitting diodes (OLEDs). The invention extends to electroluminescent devices comprising one or more of these compounds as an emitter and a host material.
    公开号:
    WO2022269257A1
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文献信息

  • PHOTOELECTRIC CONVERSION DEVICE AND SOLAR CELL USING THE SAME
    申请人:AKIYAMA Seiji
    公开号:US20120211082A1
    公开(公告)日:2012-08-23
    There is provides a photoelectric conversion device material which can be used as an electrode buffer material for a solar cell or the like and can improve durability while maintaining the interaction with an electrode and mobility; a photoelectric conversion device using the photoelectric conversion device material; and a solar cell using the photoelectric conversion device. A photoelectric conversion device containing a buffer layer and an active layer, wherein the buffer layer contains a compound represented by the following general formula (I), the active layer contains an n-type semiconductor, and the n-type semiconductor is a compound having a solubility in toluene of 0.5% by weight or more at 25° C. and having an electron mobility of 1.0×10 −6 cm 2 /Vs or more.
    提供了一种光电转换器件材料,可用作太阳能电池或类似器件的电极缓冲材料,可以提高耐久性,同时保持与电极的相互作用和移动性;使用该光电转换器件材料的光电转换器件;以及使用该光电转换器件的太阳能电池。光电转换器件包含缓冲层和活性层,其中缓冲层包含由下列通式(I)表示的化合物,活性层包含n型半导体,且该n型半导体在25℃时在甲苯中的溶解度为0.5%或更高,并具有1.0×10−6cm2/Vs或更高的电子迁移率。
  • PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL USING SAME
    申请人:Mitsubishi Chemical Corporation
    公开号:EP2463929A1
    公开(公告)日:2012-06-13
    There is provides a photoelectric conversion device material which can be used as an electrode buffer material for a solar cell or the like and can improve durability while maintaining the interaction with an electrode and mobility; a photoelectric conversion device using the photoelectric conversion device material; and a solar cell using the photoelectric conversion device. A photoelectric conversion device containing a buffer layer and an active layer, wherein the buffer layer contains a compound represented by the following general formula (I), the active layer contains an n-type semiconductor, and the n-type semiconductor is a compound having a solubility in toluene of 0.5% by weight or more at 25°C and having an electron mobility of 1.0×10-6 cm2/Vs or more.
    本发明提供了一种光电转换装置材料,该材料可用作太阳能电池等的电极缓冲材料,并能在保持与电极的相互作用和流动性的同时提高耐用性;一种使用该光电转换装置材料的光电转换装置;以及一种使用该光电转换装置的太阳能电池。一种包含缓冲层和活性层的光电转换装置,其中缓冲层包含由以下通式(I)表示的化合物,活性层包含n型半导体,n型半导体是在25℃时在甲苯中的溶解度为0.5%(重量)或更高并且电子迁移率为1.0×10-6 cm2/Vs或更高的化合物。
  • Organic light-emitting device
    申请人:SAMSUNG DISPLAY CO., LTD.
    公开号:US10756274B2
    公开(公告)日:2020-08-25
    An organic light-emitting device including a first electrode; a second electrode; emission units stacked between the first electrode and the second electrode and including at least one emission layer; and charge generation layers between two adjacent emission units, the charge generation layers each including an n-type charge generation layer and p-type charge generation layer, a maximum emission wavelength of light emitted by at least one of the emission units is different from that of another emission unit, one n-type charge generation layer includes a first compound and a metal-containing material, the first compound being represented by Formula 1, the p-type charge generation layers include an amino group-free compound, at least one of the emission units further includes a hole transporting (HT)-emission auxiliary layer on a first electrode side thereof, and the HT-emission auxiliary layer includes at least one second compound, the second compound being represented by Formula 2:
    一种有机发光器件,包括第一电极;第二电极;堆叠在第一电极和第二电极之间并包括至少一个发射层的发射单元;相邻两个发射单元之间的电荷发生层,电荷发生层各包括一个 n 型电荷发生层和一个 p 型电荷发生层,至少一个发射单元发出的光的最大发射波长不同于另一个发射单元,其中一个 n 型电荷发生层包括一个第一化合物和一个含属材料、第一化合物由式 1 表示,p 型电荷发生层包括不含基的化合物,至少一个发射单元进一步包括位于其第一电极侧的空穴传输(HT)发射辅助层,HT-发射辅助层包括至少一种第二化合物,第二化合物由式 2 表示:
  • Harmonizing Triplet Level and Ambipolar Characteristics of Wide-Gap Phosphine Oxide Hosts toward Highly Efficient and Low Driving Voltage Blue and Green PHOLEDs: An Effective Strategy Based on Spiro-Systems
    作者:Jie Zhao、Guo-Hua Xie、Cheng-Rong Yin、Ling-Hai Xie、Chun-Miao Han、Run-Feng Chen、Hui Xu、Ming-Dong Yi、Zhao-Peng Deng、Shu-Fen Chen、Yi Zhao、Shi-Yong Liu、Wei Huang
    DOI:10.1021/cm201654c
    日期:2011.12.27
    A series of phosphine oxide (PO) hosts based on diphenylphosphine oxide and spiro[fluorene-9,9'-xanthene] (SFX) moieties, SFX2PO, SFX27PO, SFX2'PO, and SFX2'7'PO, were designed and synthesized. On the basis of the different electrical properties of xanthene and fluorene in SFX, the influence of substitution position on the chemical and optophysical properties of the ambipolar-core based systems were investigated in detail. The effective strategy of introducing electron-withdrawing PO moieties in electron-deficient moieties in the molecules accompanied with suitable linkages insulating the electron-rich and -deficient moieties was convincingly demonstrated, which can endow the hosts with much better carrier injecting and transporting ability and high enough T-1 for blue and green phosphors. As the results, the operating voltages of the devices based on SFX2PO and SFX27PO were much lower than those of the devices based on SFX2'PO and SFX2'7'PO. Simultaneously, the efficiencies of the SFX2PO based devices were about twice of those of the devices based on SFX2'PO and SFX2'7'PO. We suppose that it is not necessary to achieve too high T1 and improved electron injection through PO moieties at the cost of sacrificing the hole injecting ability of the chromophores. An ideal strategy is preserving high enough T1 and improving electron injection by utilizing PO moieties without reducing hole injection and transportation in the hosts.
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