申请人:JSR Corporation
公开号:EP1058274A1
公开(公告)日:2000-12-06
A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition.
The composition comprises
(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of
(A-1) compounds represented by the formula (1): R1aSi(OR2)4-a, and
(A-2) compounds represented by the formula (2): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c; and
(B) a compound represented by the formula (3): R8O(CHCH3CH2O)eR9.
一种用于成膜的组合物,该组合物可在半导体器件等的生产中用作层间绝缘膜材料,并可获得具有优异均匀性、低介电常数、低泄漏电流和优异存储稳定性的涂膜;以及一种使用该组合物的绝缘膜成膜材料。
该组合物包括
(A) 通过水解和缩合至少一种选自以下组别的化合物而得到的水解和缩合产物
(A-1) 由式(1)表示的化合物:R1aSi(OR2)4-a,和
(A-2) 由式 (2) 代表的化合物:R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c; and
(B) 由式(3)代表的化合物:R8O(CHCH3CH2O)eR9。