4-乙炔苯酚 、 四氢呋喃 以VP-8000 (produced by Nippon Soda Co., Ltd.), and 6.5 g of 4-cyclohexylphenoxyethyl vinyl ether的产率得到1-Cyclohexyl-4-[2-(ethenyloxy)ethoxy]benzene
Resist composition for electron beam, EUV or X-ray
申请人:FUJI PHOTO FILM CO., LTD.
公开号:US20030198894A1
公开(公告)日:2003-10-23
A resist composition for an electron beam, EUV or X-ray comprising (A1) a compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation.
A resist composition containing a compound generating an acid by irradiation of an active ray or radiation and having a sulfonimide structure represented by formula (I) defined in the specification, which is excellent in sensitivity, resolution, pattern profile and edge roughness.
Positive resist composition and pattern forming method using the same
申请人:Shirakawa Koji
公开号:US20050277060A1
公开(公告)日:2005-12-15
A positive resist composition satisfying high sensitivity, high resolution, good pattern profile and good in-vacuum PED property at the same time, and a pattern forming method using the composition, are provided, which is a positive resist composition comprising: (A) a resin which is insoluble or sparingly soluble in an alkali developer and becomes soluble in an alkali developer under the action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) an organic basic compound, wherein (A1) a resin containing a repeating unit having a specific structure and (A2) a resin other than the resin (A1) are contained as the resin of the component (A); and a pattern forming method using the composition.
Resist composition and pattern forming method using the same
申请人:Mizutani Kazuyoshi
公开号:US20060172226A1
公开(公告)日:2006-08-03
A resist composition comprising (A) an acid generator represented by formula (1):
wherein S
1
to S
8
each independently represents a substituent; a, n, m, l, k, o, p, q and r each independently represents an integer of 0 to 2; X represents a single bond or a divalent linking group; R
1
and R
2
each independently represents a hydrogen atom or a substituent, and R
1
and R
2
may combine with each other to represent a single bond or a divalent linking group; and Y
−
and Z
−
each independently represents an organic sulfonate anion.
A positive working resist composition comprising (A1) a resin containing a repeating unit represented by formula (1) defined in the specification and a repeating unit represented by formula (2) defined in the specification and having a property of being insoluble or sparingly soluble in an alkali developing solution and becoming soluble in an alkali developing solution by the action of an acid, and (B) a compound capable of generating sulfonic acid upon irradiation with active rays or radiations in an amount of from 5 to 20% by weight based on the total solid content of the positive working resist composition.