4-(6-(7-coumarinyloxyl)hexyloxy)benzoyl chloride | 1013685-14-7

• 分子结构分类: 有机化合物 - 苯丙烷和聚酮 - 香豆素及其衍生物
• 英文名称: 4-(6-(7-coumarinyloxyl)hexyloxy)benzoyl chloride
• 英文别名: CHB；4-[6-(2-Oxochromen-7-yl)oxyhexoxy]benzoyl chloride
• CAS: 1013685-14-7
• 化学式: C₂₂H₂₁ClO₅
• 分子量: 400.859
• InChiKey: GZQLEGGHSHORAH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.5
• 重原子数：
  28
• 可旋转键数：
  10
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.27
• 拓扑面积：
  61.8
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  1,6-二溴己烷 在 氯化亚砜 、 水 、 potassium carbonate 、 sodium hydroxide 作用下， 以 乙醇 、 二氯甲烷 、 丙酮 为溶剂， 反应 101.0h， 生成 4-(6-(7-coumarinyloxyl)hexyloxy)benzoyl chloride
  参考文献：
  名称：

  Photo-crosslinkable polymer gate dielectrics for hysteresis-free organic field-effect transistors with high solvent resistance

  摘要：

  聚（N-（4-羟基苯基）马来酰亚胺-4-乙烯基苯酚）（PHPMIVP）及其衍生物被开发用于聚合物栅极电介质，对各种有机溶剂具有很高的耐化学性，并且在 FET 中无滞后现象。PHPMIVP 被光反应侧基修饰，包括肉桂酰基（PHPMIVP-C）、甲基酰基（PHPMIVP-M）或 4-(6-(7-香豆酰氧)己氧基)苯甲酰基（PHPMIVP-CHB）。特别是，PHPMIVP-CHB 具有很高的热稳定性，对丙酮、四氢呋喃、四氯乙烯、氯仿和氯苯等各种有机溶剂具有很强的耐化学腐蚀性，因此可以通过连续旋铸工艺形成介电层和半导体层，而不会降低器件的性能。用各种有机溶剂、光刻胶剥离剂（PRS2000）或金蚀刻剂（KI 溶液）处理 PHPMIVP-CHB 薄膜后，既未观察到击穿电压偏移，也未观察到漏电流密度曲线的变化。通过顺序旋铸 PHPMIVP-CHB 绝缘层和 PQTBTz-C12 半导体层制成的场效应晶体管显示出电荷迁移率为 μFET = 0.029 cm2 V-1 s-1，导通/关断比 = 106，比在 PHPMIVP、PHPMIVP-C 和 PHPMIVP-M 等其他聚合物上制成的 PQTBTz-C12 场效应晶体管好近 10 倍。

  DOI：

  10.1039/c3ra43890b

文献信息

• Copolymer, organic insulating layer composition, and organic insulating layer and organic thin film transistor manufactured using the same
  申请人：Kim Joo Young

  公开号：US20080197345A1

  公开（公告）日：2008-08-21

  Disclosed herein is a copolymer, which may include side chains which may decrease the surface energy of an insulating layer, thereby improving the alignment of a semiconductor material, and side chains including photoreactive functional groups having an increased degree of cross-linking, thereby improving the characteristics of an organic thin film transistor manufactured using the same, an organic insulating layer composition including the copolymer, an organic insulating layer, an organic thin film transistor, an electronic device including the same and methods of fabricating the same. According to the copolymer of example embodiments, the surface energy of an insulating layer may be decreased, so that the alignment of a semiconductor material may be improved, thereby improving the threshold voltage and charge mobility and decreasing the generation of hysteresis at the time of driving the transistor.

  本文公开一种共聚物，该共聚物可能包括侧链，这些侧链可以降低绝缘层的表面能量，从而改善半导体材料的排列，以及包括光敏功能基团的侧链，具有增加的交联度，从而改善使用相同材料制造的有机薄膜晶体管的特性，包括该共聚物的有机绝缘层组合物、有机绝缘层、有机薄膜晶体管、包括相同的电子设备以及制造它们的方法。根据实施例中的共聚物，绝缘层的表面能量可以降低，从而可以改善半导体材料的排列，从而改善阈值电压和电荷迁移率，并减少驱动晶体管时滞后的产生。
• Composition for preparing organic insulating film, organic insulating film prepared by using the same and organic thin film transistor comprising the organic insulating film
  申请人：Lee Eun Kyung

  公开号：US20080067505A1

  公开（公告）日：2008-03-20

  Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

  本发明涉及一种组合物，包括有机绝缘聚合物，其中引入了一种光反应性功能基团，该功能基团显示出增加的交联度，并引入到侧链中。还涉及一种包括该组合物的有机绝缘膜，一种包括该有机绝缘膜的有机薄膜晶体管（OTFT），一种包括该有机薄膜晶体管的电子器件以及制备该有机绝缘膜、有机薄膜晶体管和电子器件的方法。示例实施例的有机绝缘膜组成的OTFT在驱动期间可能不会显示任何滞后，因此可能表现出均匀的特性。
• US7675059B2
  申请人：——

  公开号：US7675059B2

  公开（公告）日：2010-03-09
• US8273460B2
  申请人：——

  公开号：US8273460B2

  公开（公告）日：2012-09-25
• Photo-crosslinkable polymer gate dielectrics for hysteresis-free organic field-effect transistors with high solvent resistance
  作者：Eun Kyung Lee、Joo Young Kim、Jong Won Chung、Bang-Lin Lee、Youngjong Kang

  DOI：10.1039/c3ra43890b

  日期：——

  Poly(N-(4-hydroxyphenyl)maleimide-co-4-vinylphenol) (PHPMIVP) and its derivatives were developed for polymer gate dielectrics exhibiting high chemical resistance to various organic solvents and hysteresis-free operations in FET. PHPMIVP were modified with photo-reactive side-groups including cinnamoyl (PHPMIVP-C), methacroyl (PHPMIVP-M) or 4-(6-(7-coumarinyloxyl)hexyloxy)benzoyl (PHPMIVP-CHB). Especially, PHPMIVP-CHB exhibited high thermal stability and very strong chemical resistance to various organic solvents including acetone, THF, tetraline, chloroform and chlorobenzene, which allow forming dielectric layers and semiconducting layers by sequential spin-casting processes without deterioration of device performance. Neither breakdown-voltage shift nor change in the leakage current density curve was observed after treating PHPMIVP-CHB film with various organic solvents, photoresist stripper (PRS2000) or Au etchant (KI solution). The field-effect transistors fabricated by sequential spin-casting of PHPMIVP-CHB insulating layers and PQTBTz-C12 semiconducting layers showed charge mobility with μFET = 0.029 cm2 V−1 s−1 and on/off ratio = 106 which are almost 10 times better than those of PQTBTz-C12 FETs fabricated on other polymers such as PHPMIVP, PHPMIVP-C and PHPMIVP-M.

  聚（N-（4-羟基苯基）马来酰亚胺-4-乙烯基苯酚）（PHPMIVP）及其衍生物被开发用于聚合物栅极电介质，对各种有机溶剂具有很高的耐化学性，并且在 FET 中无滞后现象。PHPMIVP 被光反应侧基修饰，包括肉桂酰基（PHPMIVP-C）、甲基酰基（PHPMIVP-M）或 4-(6-(7-香豆酰氧)己氧基)苯甲酰基（PHPMIVP-CHB）。特别是，PHPMIVP-CHB 具有很高的热稳定性，对丙酮、四氢呋喃、四氯乙烯、氯仿和氯苯等各种有机溶剂具有很强的耐化学腐蚀性，因此可以通过连续旋铸工艺形成介电层和半导体层，而不会降低器件的性能。用各种有机溶剂、光刻胶剥离剂（PRS2000）或金蚀刻剂（KI 溶液）处理 PHPMIVP-CHB 薄膜后，既未观察到击穿电压偏移，也未观察到漏电流密度曲线的变化。通过顺序旋铸 PHPMIVP-CHB 绝缘层和 PQTBTz-C12 半导体层制成的场效应晶体管显示出电荷迁移率为 μFET = 0.029 cm2 V-1 s-1，导通/关断比 = 106，比在 PHPMIVP、PHPMIVP-C 和 PHPMIVP-M 等其他聚合物上制成的 PQTBTz-C12 场效应晶体管好近 10 倍。