1-Thiol-2,3,5,6-tetrafluorbenzolsulfonsaeure | 67686-94-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1-Thiol-2,3,5,6-tetrafluorbenzolsulfonsaeure
• 英文别名: 4-SHC6F4SO3H；2,3,5,6-Tetrafluoro-4-sulfanylbenzene-1-sulfonic acid；2,3,5,6-tetrafluoro-4-sulfanylbenzenesulfonic acid
• CAS: 67686-94-6
• 化学式: C₆H₂F₄O₃S₂
• 分子量: 262.206
• InChiKey: RWGDCDGKQNECLV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.7
• 重原子数：
  15
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  63.8
• 氢给体数：
  2
• 氢受体数：
  8

反应信息

• 作为反应物：
  描述：

  1-Thiol-2,3,5,6-tetrafluorbenzolsulfonsaeure 在 乙酸酐 、 氯 作用下， 以 溶剂黄146 为溶剂， 以>99的产率得到2,3,5,6-Tetrafluorbenzoldisulfonsaeuremonochlorid
  参考文献：
  名称：

  2,3,5,6-Tetrafluorbenzoldisulfonsäure aus pentafluorbenzolsulfonsäure

  摘要：

  DOI：

  10.1016/s0022-1139(00)81591-2

文献信息

• Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film
  申请人：FUJIFILM CORPORATION

  公开号：US10248019B2

  公开（公告）日：2019-04-02

  A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.

  一种形成图案的方法包括：(i) 使用一种含有（A）一种能够在受到光或辐射照射时生成酸并通过酸的作用分解以降低该化合物（A）对有机溶剂的溶解度的光敏或辐射敏感树脂组合物形成薄膜；(ii) 曝光薄膜；和(iii) 使用含有有机溶剂的显影剂进行显影。
• CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
  申请人：OSAKA UNIVERSITY

  公开号：US20170052449A1

  公开（公告）日：2017-02-23

  A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

  一种图案形成方法包括将一种化学放大型光刻胶材料制成的感光树脂组成物的预定区域图案暴露于第一种放射性射线中，该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪水式暴露于第二种放射性射线中，该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该化学放大型光刻胶材料包括基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。
• Chemically amplified resist material and resist pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10018911B2

  公开（公告）日：2018-07-10

  A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.

  一种化学放大抗蚀剂材料包括一种在酸的作用下能溶于或不溶于显影液的聚合物成分，以及一种在曝光时能产生辐射敏感敏化剂和酸的生成成分。生成组件中的辐射敏感性酸和敏化剂生成剂或辐射敏感性酸生成剂包括辐射敏感性第一化合物和辐射敏感性第二化合物。第一化合物包括第一鎓阳离子和第一阴离子，第二化合物包括第二鎓阳离子和不同于第一阴离子的第二阴离子。第一鎓阳离子还原成自由基时释放的能量和第二鎓阳离子还原成自由基时释放的能量均小于 5.0 eV。
• Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device
  申请人：FUJIFILM Corporation

  公开号：US10031419B2

  公开（公告）日：2018-07-24

  There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.

  本发明提供了一种图案形成方法，包括(i)使用感光树脂组合物或辐射敏感树脂组合物在基底上形成胶片，该组合物包含(A)由于酸的作用而分解，从而改变其相对于显影剂的溶解度的树脂和(C)特定树脂、(ii) 使用含有树脂 (T) 的表层组合物在胶片上形成表层，(iii) 将具有表层的胶片暴露于放 射线或辐射，(iv) 在暴露后对具有表层的胶片进行显影，形成图案。
• Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern
  申请人：FUJIFILM Corporation

  公开号：US10234759B2

  公开（公告）日：2019-03-19

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).

  本发明提供了一种对辐照或辐射敏感的树脂组合物，该组合物包括树脂(A)和以下通式(I)的任何化合物(B)。(在通式（I）中，Rf 代表氟原子或含有至少一个氟原子的一价有机基团；R1 代表氢原子或不含氟原子的一价取代基；X1 代表至少含有两个碳原子的一价有机基团，或可选择引入氟原子以外的取代基的甲基，条件是 X1 可与 R1 键合，从而形成一个环；以及 Z 代表当暴露于放热射线或辐射时会转化为磺酸基团、酰亚胺酸基团或甲酰胺酸基团的分子）。