2,4,6-trimethoxybenzenesulfonic acid | 128612-69-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2,4,6-trimethoxybenzenesulfonic acid
• CAS: 128612-69-1
• 化学式: C₉H₁₂O₆S
• 分子量: 248.257
• InChiKey: RTBNEJHMNWQEBM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.3
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  90.4
• 氢给体数：
  1
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  2,4,6-trimethoxybenzenesulfonic acid 在 sodium hydroxide 、 N-羟基-5-降冰片烯-2,3-二甲酰亚胺 、 十六烷基三甲基氯化铵 、 potassium carbonate 、 三乙胺 、 N,N'-二环己基碳二亚胺 、 三氯氧磷 作用下， 以 乙醇 、 二氯甲烷 为溶剂， 反应 20.5h， 生成 Boc-Trp(Mtb)-Gly-OBzl
  参考文献：
  名称：

  Fukuda, Tsunehiko; Wakimasu, Mitsuhiro; Kobayashi, Shigeru, Chemical and pharmaceutical bulletin, 1982, vol. 30, # 8, p. 2825 - 2835

  摘要：

  DOI：
• 作为产物：
  描述：

  1,3,5-三甲氧基苯 在 三氧化硫 、 重水 作用下， 生成 2,4,6-trimethoxybenzenesulfonic acid
  参考文献：
  名称：

  Cerfontain, Hans; Ansink, Harold R. W.; Coenjaarts, Norbert J., Recueil des Travaux Chimiques des Pays-Bas, 1989, vol. 108, # 12, p. 445 - 452

  摘要：

  DOI：

文献信息

• Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10613440B2

  公开（公告）日：2020-04-07

  A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R1aSi(R2)4-a  Formula (1) and compounds of Formula (2): R3cSi(R4)3-c2Yb  Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.

  一种用于 EUV 光刻的抗蚀剂底层成膜组合物，显示出良好的抗蚀剂形状；包括：作为硅烷的可水解有机硅烷、其水解产物或其水解缩合物；以及含有烃基的磺酸离子与鎓离子的盐。可水解有机硅烷包括至少一种选自式（1）化合物组成的组的有机硅化合物： R1aSi(R2)4-a 式(1) 和式 (2) 的化合物： R3cSi(R4)3-c2Yb 式 (2) 其水解产物，或其水解缩合物。一种制造半导体器件的方法，包括：在半导体衬底上形成有机底层膜；通过在有机底层膜上涂敷抗蚀剂底层膜成膜组合物，然后烘烤涂敷的抗蚀剂底层膜成膜组合物，形成抗蚀剂底层膜；通过在抗蚀剂底层膜上涂敷超紫外抗蚀剂组合物，形成抗蚀剂膜；对抗蚀剂膜进行超紫外曝光；以及通过显影曝光的抗蚀剂膜，获得抗蚀剂图案。
• CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
  申请人：Carter K. Melvin

  公开号：US20050090109A1

  公开（公告）日：2005-04-28

  The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly relates to a method of polishing substrates comprising copper, tungsten, titanium, and/or polysilicon using a chemical-mechanical polishing system comprising organosulfonic acids having an electrochemical oxidation potential greater than 0.2V as an oxidizer.

  本发明涉及使用磨料和流体组合物对基底进行化学机械抛光，其中使用某些有机磺酸化合物作为氧化剂，特别是涉及一种使用化学机械抛光系统对由铜、钨、钛和/或多晶硅组成的基底进行抛光的方法，该系统包含电化学氧化电位大于 0.2V 的有机磺酸作为氧化剂。
• CERFONTAIN, HANS;ANSINK, HAROLD R. W.;COENJAARTS, NORBERT J.;DE, GRAAF ER+, REC. TRAV. CHIM. PAYS-BAS., 108,(1989) N2, C. 445-451
  作者：CERFONTAIN, HANS、ANSINK, HAROLD R. W.、COENJAARTS, NORBERT J.、DE, GRAAF ER+

  DOI：——

  日期：——
• SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ONIUM SULFONATE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150210829A1

  公开（公告）日：2015-07-30

  A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R 1 a Si(R 2 ) 4−a Formula (1) and compounds of Formula (2): R 3 c Si(R 4 ) 3−c 2 Y b Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.
• US7247566B2
  申请人：——

  公开号：US7247566B2

  公开（公告）日：2007-07-24