通过钯催化的直接C–H芳基化反应合成了带有6-芳基-1,4-二硫富烯基的新型多级氧化还原四硫富瓦烯(TTF)。在催化量的Pd(OAc)2,P(t- Bu 3)·HBF 4和过量的Cs 2 CO 3存在下,TTF的C–H芳基化与数个带有1,3-芳基溴的芳基化二硫醇-2-亚烷基有效地发生以产生相应的π-共轭分子。我们还通过数字仿真成功地估算了所获得化合物的每个氧化步骤中的氧化电位和电子数量。
Synthesis of Tetrathiafulvalene Derivatives by the Use of Organoaluminium Reagents
作者:Takehiko Mori、Hiroo Inokuchi
DOI:10.1246/cl.1992.1873
日期:1992.9
Bis(dimethylaluminium) salts of ethanedithiol, 1,2-benzenedithiol, and ethylenedithiol react with 1,3-dithiolane-2-carboxylate esters to give dihydro- and tetrahydro-tetrathiafulvalenes as well as tetrathiafulvalenederivatives.
The scope and limitations of the synthesis of unsymmetrically substituted TTF derivatives via the “phosphonate way” was investigated using as precursors 1,3-dithiol-2-yl-phosphonates and 1,3-dithiol-2-yliden iminium salts with various substitutents on the dithiole cycles.
[EN] PROCESS FOR THE GENERATION OF METALLIC FILMS<br/>[FR] PROCÉDÉ POUR LA PRODUCTION DE FILMS MÉTALLIQUES
申请人:BASF SE
公开号:WO2017093265A1
公开(公告)日:2017-06-08
The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.
Two benzene-fused tetrathiafulvalene compounds with polymerization sites as positive electrode materials were synthesized. The molecular structures were determined by single-crystal X-ray structure analysis, and electrochemical analysis confirmed the formation of the polymer on the electrode. One of the synthesized compounds exhibited a long cycle life and a high rate performance.
合成了两种具有聚合位点的苯稠合四硫富瓦烯化合物作为正极材料。通过单晶 X 射线结构分析确定分子结构,电化学分析证实在电极上形成了聚合物。其中一种合成化合物表现出长循环寿命和高倍率性能。
Process for the generation of metallic films
申请人:BASF SE
公开号:US10570514B2
公开(公告)日:2020-02-25
The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.