5-ethyl-2,4-dimethyl-anisole | 77329-25-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 5-ethyl-2,4-dimethyl-anisole
• 英文别名: 5-Aethyl-2,4-dimethyl-anisol；1-Ethyl-5-methoxy-2,4-dimethylbenzene
• CAS: 77329-25-0
• 化学式: C₁₁H₁₆O
• 分子量: 164.247
• InChiKey: PRQCHVXKCGIEND-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.4
• 重原子数：
  12
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  5-ethyl-2,4-dimethyl-anisole 、 乙酰氯 在 二硫化碳 、 三氯化铝 作用下， 生成 1-(5-羟基-2,4-二甲基-苯基)-乙酮
  参考文献：
  名称：

  v. Auwers; Mauss, Chemische Berichte, 1928, vol. 61, p. 1502

  摘要：

  DOI：
• 作为产物：
  描述：

  2,4-二甲基-1-甲氧基苯 在 盐酸 、 二硫化碳 、 三氯化铝 、 amalgamated zinc 作用下， 生成 5-ethyl-2,4-dimethyl-anisole
  参考文献：
  名称：

  v. Auwers; Mauss, Chemische Berichte, 1928, vol. 61, p. 1502

  摘要：

  DOI：

文献信息

• [EN] ANILINOPYRIMIDINES AS HAEMATOPOIETIC PROGENITOR KINASE 1 (HPK1) INHIBITORS<br/>[FR] ANILINOPYRIMIDINES EN TANT QU'INHIBITEURS DE KINASE 1 PROGÉNITRICES HÉMATOPOÏÉTIQUES (HPK1)
  申请人：ARIAD PHARMA INC

  公开号：WO2018102366A1

  公开（公告）日：2018-06-07

  The invention relates to HPK1 inhibitors useful in the treatment of cancers, and other serine-threonine kinase mediated diseases, having the Formula: where A, R1, R2, R3, R4, R5, R6, R16, R17, X1, X2, X3, X4, m, and n are described herein.

  这项发明涉及用于治疗癌症和其他丝氨酸-苏氨酸激酶介导的疾病的HPK1抑制剂，其化学式为：其中A、R1、R2、R3、R4、R5、R6、R16、R17、X1、X2、X3、X4、m和n如本文所述。
• TYROSINE KINASE INHIBITORS
  申请人：Principia Biopharma, Inc.

  公开号：US20140303161A1

  公开（公告）日：2014-10-09

  The present disclosure provides compounds and pharmaceutically acceptable salts thereof that are tyrosine kinase inhibitors, in particular BLK, BMX, EGFR, HER2, HER4, ITK, TEC, BTK, and TXK and are therefore useful for the treatment of diseases treatable by inhibition of tyrosine kinases such as cancer and inflammatory diseases such as arthritis, and the like. Also provided are pharmaceutical compositions containing such compounds and pharmaceutically acceptable salts thereof and processes for preparing such compounds and pharmaceutically acceptable salts thereof.

  本公开提供的化合物及其药学上可接受的盐是酪氨酸激酶抑制剂，特别是BLK、BMX、EGFR、HER2、HER4、ITK、TEC、BTK和TXK，因此可用于治疗通过抑制酪氨酸激酶的疾病，如癌症和炎症性疾病，如关节炎等。还提供了包含这些化合物及其药学上可接受的盐的制药组合物以及制备这些化合物及其药学上可接受的盐的过程。
• PYRAZOLOPYRIMIDINE DERIVATIVES AS TYROSINE KINASE INHIBITORS
  申请人：Goldstein David Michael

  公开号：US20140221398A1

  公开（公告）日：2014-08-07

  The present disclosure provides compounds and pharmaceutically acceptable salts that are tyrosine kinase inhibitors, in particular BLK, BMX, EGFR, HER2, HER4, ITK, Jak3, TEC, Btk, and TXK and are therefore useful for the treatment of diseases treatable by inhibition of tyrosine kinases such as cancer and inflammatory diseases such as arthritis, and the like. Also provided are pharmaceutical compositions containing such compounds and pharmaceutically acceptable salts and processes for preparing such compounds and pharmaceutically acceptable salts.

  本公开提供化合物和药学上可接受的盐，这些化合物是酪氨酸激酶抑制剂，特别是BLK、BMX、EGFR、HER2、HER4、ITK、Jak3、TEC、Btk和TXK，因此可用于治疗通过抑制酪氨酸激酶治疗的疾病，例如癌症和炎症性疾病，如关节炎等。此外，还提供了含有这些化合物和药学上可接受的盐的药物组合物和制备这些化合物和药学上可接受的盐的过程。
• BATES, ROBERT B.;SIAHAAN, TERUNA J.;SUVANNACHUT, KESSARA;VASEY, STEPHEN K+, J. ORG. CHEM., 52,(1987) N 20, 4605-4608
  作者：BATES, ROBERT B.、SIAHAAN, TERUNA J.、SUVANNACHUT, KESSARA、VASEY, STEPHEN K+

  DOI：——

  日期：——
• Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same
  申请人：Ogihara Tsutomu

  公开号：US20100285407A1

  公开（公告）日：2010-11-11

  There is disclosed a thermosetting silicon-containing antireflection film-forming composition, to form a silicon-containing antireflection film in a multilayer resist process used in a lithography, wherein the composition is at least capable of forming—on an organic film that is an underlayer film having a naphthalene skeleton—a silicon-containing antireflection film whose refractive index “n” and extinction coefficient “k” at 193 nm satisfy the following relationship: 2n−3.08≦k≦20n−29.4 and 0.01≦k≦0.5. There can be provided, in a multilayer resist process used in a lithography, a thermosetting silicon-containing antireflection film-forming composition to form a silicon-containing antireflection film which can form an excellent pattern having depressed reflection of an exposing light at the time when a photoresist film is formed on the silicon-containing antireflection film formed on an organic film having a naphthalene skeleton as a resist underlayer film and subsequently a resist pattern is formed; has excellent dry etching properties between the photoresist film—which is the upperlayer of the silicon-containing antireflection film—and the organic film—which is the underlayer—; and has an excellent storage stability, and a substrate having the silicon-containing antireflection film from the composition for forming the silicon-containing antireflection film, and a patterning process using the same.