Class of volatile compounds for the deposition of thin films of metals and metal compounds
申请人:Denk K. Michael
公开号:US20050042372A1
公开(公告)日:2005-02-24
The invention provides an organometallic complex, containing oxygen free organic ligands, for the deposition of a metal, preferably copper, silver or gold, and preferably by way of chemical vapor deposition. The organometallic complex having the formula
[(D
o
)
n
ML
x
]
k
where M is a metal preferably selected from the group consisting of Cu, Ag and Au;
D
o
is selected from the group comprising ethers, phosphines, olefins, sulfides, pyridines, carbonyl, hydroxyl, cyclopentadiene, benzene derivatives, allyls, alkyls, amines, polyamines, aniline derivatives, cyclooctadiene and combinations thereof; n is an integer having a value from 0 to 4; k is an integer having a value from 1 to 4; x is an integer having a value from 1 to 4; and L is an amidinate ligand of the formula
R
1
—N
C(R
2
)
N—R
3
where R
1
, R
2
and R
3
are selected from the group consisting of alkyls, allyls, aryls, heteroaryls, hydrogen, non-metals and metalloids; and where R
1
, R
2
and R
3
are different or the same.
本发明提供了一种含有无氧有机
配体的有机
金属络合物,用于沉积
金属,最好是
铜、
银或
金,最好采用
化学气相沉积法。有机
金属络合物的
化学式为
[(D
o
)
n
ML
x
]
k
其中 M 是一种
金属,最好选自 Cu、Ag 和 Au 组成的组;
D
o
选自由醚、膦、烯烃、
硫化物、
吡啶、羰基、羟基、
环戊二烯、苯衍
生物、烯丙基、 烷基、胺、
多胺、
苯胺衍
生物、
环辛二烯及其组合组成的组;n 是数值为 0 至 4 的整数;k 是数值为 1 至 4 的整数;x 是数值为 1 至 4 的整数;以及 L 是式中的脒基
配体。
R
1
-N
C(R
2
)
N-R
3
其中 R
1
, R
2
和 R
3
选自由烷基、烯丙基、芳基、杂芳基、氢、非
金属和
金属组成的组;且其中 R
1
, R
2
和 R
3
不同或相同。