α-acetoxy-β,β,β-trifluoro-isobutyric acid methyl ester | 428-18-2

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: α-acetoxy-β,β,β-trifluoro-isobutyric acid methyl ester
• 英文别名: 2-Acetoxy-3,3,3-trifluor-2-methyl-propionsaeure-methylester；α-Acetoxy-β,β,β-trifluor-isobuttersaeure-methylester；Methyl 2-acetyloxy-3,3,3-trifluoro-2-methylpropanoate
• CAS: 428-18-2
• 化学式: C₇H₉F₃O₄
• 分子量: 214.141
• InChiKey: UVVXVZHZFYBULS-UHFFFAOYSA-N

物化性质

• 沸点：
  191.4±40.0 °C(Predicted)
• 密度：
  1.278±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  14
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.71
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  7

安全信息

• 海关编码：
  2918990090

反应信息

• 作为反应物：
  描述：

  α-acetoxy-β,β,β-trifluoro-isobutyric acid methyl ester 在 乙醚 、 镍 作用下， 生成 3,3,3-三氟-2-甲基丙酸甲酯
  参考文献：
  名称：

  Buxton et al., Journal of the Chemical Society, 1954, p. 366,370

  摘要：

  DOI：
• 作为产物：
  描述：

  3,3,3-三氟-2-羟基-2-甲基丙酸甲酯 、 乙酸酐 在 sodium acetate 作用下， 生成 α-acetoxy-β,β,β-trifluoro-isobutyric acid methyl ester
  参考文献：
  名称：

  Darrall et al., Journal of the Chemical Society, 1951, p. 2329,2330

  摘要：

  DOI：

文献信息

• Copolymer for use in chemical amplification resists
  申请人：——

  公开号：US20030186160A1

  公开（公告）日：2003-10-02

  A copolymer is provided for use in a lithographic photoresist composition, particularly a chemical amplification photoresist. In a preferred embodiment, the copolymer is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. In one embodiment, the copolymer is comprised of an &agr;-cyano- or an &agr;-trifluoro-methacrylate monomer unit and a vinyl ether monomer unit. A lithographic photoresist composition containing the fluorinated copolymer is also provided, as is a process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.

  提供一种用于光刻光阻组合物的共聚物，特别是化学增强型光刻光阻。在一个优选实施例中，该共聚物在深紫外辐射下具有相当的透明度，即波长小于250纳米的辐射，包括157纳米、193纳米和248纳米的辐射，并具有改进的灵敏度和分辨率。在一个实施例中，该共聚物由α-氰基或α-三氟甲基丙烯酸甲酯单体单元和乙烯醚单体单元组成。还提供了含氟共聚物的光刻光阻组合物，以及使用该组合物在基板上生成抗蚀图案的工艺，即在集成电路或类似器件的制造中。
• Substituted norbornene fluoroacrylate copolymers and use thereof lithographic photoresist compositions
  申请人：——

  公开号：US20020102490A1

  公开（公告）日：2002-08-01

  Copolymers prepared by radical polymerization of a substituted norbomene monomer and a fluoromethacrylic acid, fluoromethacrylonitrile, or fluoromethacrylate comonomer are provided. The polymers are useful in lithographic phtoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

  本发明提供了由取代的诺博门单体和氟甲基丙烯酸、氟甲基丙烯腈或氟甲基丙烯酸酯共聚物通过自由基聚合制备而成。这些聚合物在光刻光阻组分中非常有用，特别是在化学增强光刻光阻中。在首选实施方式中，这些聚合物对深紫外（DUV）辐射，即波长小于250 nm的辐射，包括157 nm、193 nm和248 nm辐射，具有较高的透明度，因此在DUV光刻光阻组分中非常有用。本发明还提供了一种使用该组合物在基板上生成光阻图像的方法，即在集成电路或类似器件的制造中。
• Lithographic photoresist composition and process for its use
  申请人：——

  公开号：US20020146639A1

  公开（公告）日：2002-10-10

  A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

  提供了一种可用作化学放大光刻胶的光刻胶组合物。在优选实施例中，该组合物对深紫外辐射，即波长小于250nm的辐射，包括157nm、193nm和248nm辐射，具有改善的灵敏度和分辨率，并且基本透明。组合物包括一种氟化乙烯基聚合物，特别是氟化甲基丙烯酸酯、氟化甲基丙烯腈或氟化甲基丙烯酸，以及光酸发生剂。聚合物可以是均聚物或共聚物。还提供了一种使用该组合物在基板上生成光刻图像的工艺，即在集成电路或类似产品制造中使用。
• Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions
  申请人：International Business Machines Corporation

  公开号：US20020164538A1

  公开（公告）日：2002-11-07

  Copolymers prepared by radical polymerization of a fluorine-containing aromatic monomer and an acrylate-based comonomer that may or may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

  该文描述了通过自由基聚合制备含氟芳香单体和丙烯酸酯基共聚单体（可以是氟化的或非氟化的）的共聚物。这些聚合物在光刻胶组成中非常有用，特别是在化学放大光刻胶中。在首选实施例中，这些聚合物对深紫外（DUV）辐射（即波长小于250 nm的辐射，包括157 nm和248 nm辐射）具有相当的透明度，因此在DUV光刻胶组成中非常有用。还提供了一种使用该组成物在基板上生成抗蚀图像的方法，即在集成电路或类似物的制造中。
• US6548219B2
  申请人：——

  公开号：US6548219B2

  公开（公告）日：2003-04-15