ULTRAVIOLET ABSORBER, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20160053087A1
公开(公告)日:2016-02-25
The present invention provides an ultraviolet absorber containing a compound represented by the formula (A-1),
wherein R represents a methyl group, an ethyl group, a propyl group, or an allyl group, and R
1
, R
2
, R
3
, and R
4
may be the same or different, and each represent a hydrogen atom, a benzoyl group, a toluoyl group, a naphthoyl group, or an anthranoyl group. By adding the ultraviolet absorber to a composition for forming a resist under layer film, reflection can be suppressed particularly in lithography process by an ultraviolet laser, and a pattern profile can be improved without adverse effects on dry etching mask properties and adhesiveness to a resist pattern.
本发明提供了一种含有式(A-1)所代表的化合物的紫外线吸收剂,其中R代表甲基基团、乙基基团、丙基基团或烯丙基基团,而R1、R2、R3和R4可以相同也可以不同,每个代表氢原子、苯甲酰基、甲苯酰基、萘甲酰基或蒽甲酰基。通过将紫外线吸收剂添加到用于形成抗蚀底层膜的组合物中,可以在紫外线激光的光刻过程中特别抑制反射,并且可以改善图案轮廓而不会对干法刻蚀掩模特性和对抗蚀图案的附着性产生不良影响。