A positive photoresist composition comprises (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, (B) a resin which is insoluble or sparingly soluble in alkali but becomes soluble in alkali by the action of an acid, and (C) a nitrogen-containing compound containing at least one partial structure represented by formula (I) shown below in its molecule:
1
The positive photoresist composition of the present invention is suitable for exposure to a far ultraviolet ray, particularly a KrF excimer laser beam, improved in line edge roughness and also excellent in sensitivity, resolution, depth of focus and resist profile.
一种正性光阻组合物,包括(A)在接受光致发酵或辐射后生成酸的化合物,(B)在碱性溶液中不溶或难溶,但在酸的作用下变得可溶的
树脂,以及(C)含有至少一个分子中的公式(I)所示的部分结构的
含氮化合物。本发明的正性光阻组合物适用于远紫外线照射,特别是KrF准分子激光束,具有改善线边粗糙度、灵敏度、分辨率、焦深和抗蚀性能的优点。