2-(2-cyano-ethoxy)-propionic acid | 98196-89-5

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 2-(2-cyano-ethoxy)-propionic acid
• 英文别名: 2-(2-Cyan-aethoxy)-propionsaeure；2-(2-Cyanoethoxy)propanoic acid
• CAS: 98196-89-5
• 化学式: C₆H₉NO₃
• mdl: MFCD19230240
• 分子量: 143.142
• InChiKey: SUBITCHUAZRXIW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.2
• 重原子数：
  10
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.666
• 拓扑面积：
  70.3
• 氢给体数：
  1
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  丙烯腈 、 alkaline earth salt of/the/ methylsulfuric acid 在 1,4-二氧六环 、 sodium hydroxide 、 水 作用下， 生成 2-(2-cyano-ethoxy)-propionic acid
  参考文献：
  名称：

  DE842194

  摘要：

  公开号：

文献信息

• CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
  申请人：Lee Wai Mun

  公开号：US20090130849A1

  公开（公告）日：2009-05-21

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

  本文描述了一种化学机械平整化（或其他抛光）的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率，包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
• METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
  申请人：Lee Wai Mun

  公开号：US20100043823A1

  公开（公告）日：2010-02-25

  The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

  本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法，包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分，如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
• COMPOSITION COMPRISING CHELATING AGENTS CONTAINING AMIDOXIME COMPOUNDS
  申请人：Lee Wai Mun

  公开号：US20100105595A1

  公开（公告）日：2010-04-29

  The present invention is a novel aqueous cleaning solution for use in semiconductor front end of the line (FEOL) manufacturing process wherein the cleaning solution comprises at least one amidoxime compound.

  本发明是一种用于半导体前端制造过程中的新型水性清洗溶液，其中清洗溶液包含至少一种酰胺肟化合物。
• METHODS OF POST CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING USING AMIDOXIME COMPOSITIONS
  申请人：Lee Wai Mun

  公开号：US20090133716A1

  公开（公告）日：2009-05-28

  The invention relates to a method for the removal of residues and contaminants from metal or dielectric surfaces and to a method for chemical mechanical polishing of a copper or aluminum surface. The methods of the invention include using an aqueous amidoxime complex agent. Optionally, the pH of the solution can be adjusted with an acid or base. The method includes applying the above composition to the copper or aluminum surface and polishing the surface in the presence of the composition.

  本发明涉及一种从金属或介电表面去除残留物和污染物的方法，以及一种化学机械抛光铜或铝表面的方法。本发明的方法包括使用水溶性的酰胺肟络合剂。可选地，可以使用酸或碱调整溶液的pH值。该方法包括将上述组合物应用于铜或铝表面，并在组合物存在的情况下抛光表面。
• COPPER CMP POLISHING PAD CLEANING COMPOSITION COMPRISING OF AMIDOXIME COMPOUNDS
  申请人：Lee Wai Mun

  公开号：US20090137191A1

  公开（公告）日：2009-05-28

  The present invention relates to methods of using amidoxime compositions for cleaning polishing pads, particularly after chemical mechanical planarization or polishing is provided. A polishing pad is cleaned of Cu CMP by-products, subsequent to or during planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising an aqueous amidoxime compound solution in water.

  本发明涉及使用氨基甲酰肼组合物清洁抛光垫的方法，特别是在化学机械平面化或抛光后提供的方法。在平面化晶片的过程中或之后，通过在抛光垫表面涂布含有水的氨基甲酰肼化合物溶液的组合物，清除铜化学机械抛光副产物，以减少垫面光泽。