RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20180284615A1
公开(公告)日:2018-10-04
Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.
提供了一种抗碱性过氧化氢水溶液、填孔和平坦化特性以及干法蚀刻特性优异的抗蚀底层膜组合物,该抗蚀底层膜组合物用于多层光刻方法,包括:(A1)聚合物(1A),其包括由以下通式(1)表示的重复单元中的一个或两个或多个;(A2)一种或两种或多种分子量不超过2000且不具有3,4-二羟基苯基的多酚化合物;和(B)有机溶剂。