由2,2'-二溴二苯基乙炔简单地一锅合成[1] benzotelluro [3,2- b ] [1] -benzotellurophenes及其硒和硫类似物†
摘要:
用叔丁基锂处理2,2'-二溴二苯乙炔7,然后插入碲导致分子内环闭合,得到[1] benzotelluro [3,2- b ] [1] benzotellurophene 8a。同样地,[1] benzoseleno-并[3,2- b ] [1]苯并硒吩8B和[1]苯并噻吩并[3,2- b ] [1]苯并噻吩8C也获得了。
An Organic Metal Derived from a Selenium Analogue of Benzothienobenzothiophene
作者:Toshiki Higashino、Tomofumi Kadoya、Shohei Kumeta、Kohei Kurata、Tadashi Kawamoto、Takehiko Mori
DOI:10.1002/ejic.201402221
日期:2014.8
excellent organic transistor material, and its charge-transfer salt (BTBT)2PF6 is an organicmetal that exhibits conductivity as high as 1500 S cm–1 at room temperature. Here, we report a charge-transfer salt of the seleniumanalogue, benzoseleno[3,2-b]benzoselenophene (BSBS). (BSBS)2TaF6 is a one-dimensional metal isostructural to (BTBT)2PF6. The resistance jump temperature is reduced from 150 to 90
苯并噻吩并[3,2-b]苯并噻吩(BTBT)是一种优异的有机晶体管材料,其电荷转移盐(BTBT)2PF6是一种有机金属,在室温下电导率高达1500 S cm-1。在这里,我们报告了硒类似物苯并硒 [3,2-b] 苯并硒酚 (BSBS) 的电荷转移盐。(BSBS)2TaF6 是一种与 (BTBT)2PF6 同构的一维金属。电阻跃变温度由150K降低到90K,低温电阻率的增加幅度大大减小。然而,自旋敏感性在 50 K 以下明显下降,这意味着低温基态本质上是单线态。
2,7-Diphenyl[1]benzoselenopheno[3,2-<i>b</i>][1]benzoselenophene as a Stable Organic Semiconductor for a High-Performance Field-Effect Transistor
[1]Benzoselenopheno[3,2-b][1]benzoselenophene (BSBS) and its 2,7-diphenyl derivative (DPh-BSBS) were readily synthesized from diphenylacetylene and bis(biphenyl-4-yl)acetylene, respectively, with a newly developed straightforward selenocyclization protocol. In contrast to the parent BSBS that has poor film-forming properties, the diphenyl derivative DPh-BSBS formed a good thin film on the Si/SiO2 substrate by vapor deposition. X-ray diffraction examination revealed that this film consists of highly ordered molecules that are nearly perpendicular to the substrate, making it suitable for use in the fabrication of organic field-effect transistors (OFETs). When fabricated at different substrate temperatures (room temperature, 60 degrees C, and 100 degrees C) in a "top-contact" configuration, all the DPh-BSBS-based OFET devices exhibited excellent p-channel field-effect properties with hole mobilities >0.1 cm(2) V-1 s(-1) and current on/off ratios of similar to 10(6). This high performance was essentially maintained over 3000 continuous scans between V-g = +20 and -100 V and reproduced even after storage under ambient laboratory conditions for at least one year.