3-溴-9-乙烯基-9H-咔唑 | 46499-01-8

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吲哚及其衍生物
• 中文名称: 3-溴-9-乙烯基-9H-咔唑
• 英文名称: 3-bromo-N-vinylcarbazole
• 英文别名: 3-Br N-vinylcarbazole；3-bromo-9-vinyl-carbazole；3-Bromo-9-ethenylcarbazole
• CAS: 46499-01-8
• 化学式: C₁₄H₁₀BrN
• 分子量: 272.144
• InChiKey: DLLOBIBTOUBQQV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.6
• 重原子数：
  16
• 可旋转键数：
  1
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  4.9
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  3-溴-9-乙烯基-9H-咔唑 以63%的产率得到
  参考文献：
  名称：

  PIELICHOWSKI J.; OLSZANSKA M., POL. J. CHEM., 1978, 52, NO 5, 1089-1091

  摘要：

  DOI：
• 作为产物：
  描述：

  3-溴咔唑 、 乙烯基正丁醚 以54%的产率得到
  参考文献：
  名称：

  FILIMONOV V. D.; SIROTKINA E. E.; TSEXANOVSKAYA N. A., ZH. ORGAN. XIMII, 1979, 15, HO 1, 174-177

  摘要：

  DOI：

文献信息

• Solid state devices produced by organometallic plasma developed resists
  申请人：Bell Telephone Laboratories, Incorporated

  公开号：US04396704A1

  公开（公告）日：1983-08-02

  Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

  固态器件是通过干法蚀刻抗蚀膜来制造负性抗蚀图案的。该膜包括通常含有卤素的聚合物，以及至少一种含硅或不含硅的有机金属单体。辐射，通常是X射线辐射，将单体或单体锁定到聚合物中，随后的固定步骤将未锁定的单体或单体从抗蚀剂未辐射部分中去除。然后将膜暴露于包含氧气的等离子体中，后者以比辐射部分更快的速度去除未辐射部分，从而产生负性抗蚀图案。等离子体开发通常通过反应性离子刻蚀实现。可以使用增敏剂来扩展膜的波长响应，通常扩展到紫外或可见区域。
• Process of making solid state devices using silicon containing
  申请人：AT&T Bell Laboratories

  公开号：US04500628A1

  公开（公告）日：1985-02-19

  Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

  固态器件是通过干法蚀刻抗蚀膜以产生负抗蚀图案来制造的。该膜包括一种聚合物，通常含有卤素，以及至少一种含硅或不含硅的有机金属单体。辐射，通常是X射线辐射，将单体或单体锁定到聚合物中，随后通过固定步骤除去未锁定的单体或单体在抗蚀剂未照射部分中。然后将膜暴露于包含氧气的等离子体中，该等离子体以比辐射部分更快的速度去除未辐射的部分，从而产生负抗蚀图案。等离子体开发通常通过反应离子刻蚀完成。可以使用增敏剂将膜的波长响应扩展到紫外线或可见光区域。
• Pielichowski, Jan; Olszanska, Marta, Polish Journal of Chemistry, 1983, vol. 57, # 1-3, p. 265 - 271
  作者：Pielichowski, Jan、Olszanska, Marta

  DOI：——

  日期：——
• PIELICHOWSKI, J.;OLSZANSKA, M., POL. J. CHEM., 1983, 57, N 1-3, 265-271
  作者：PIELICHOWSKI, J.、OLSZANSKA, M.

  DOI：——

  日期：——
• A method of applying a layer in accordance with a pattern on a substrate
  申请人：Philips Electronics N.V.

  公开号：EP0025633B1

  公开（公告）日：1983-07-27