摘要:
Smectic semiconductors with high carrier mobility were designed and synthesized. The hole mobility of 3-TTP-yne-4 and 3-QTP-yne-3 at room temperature was 0.06 cm(2)/Vs and 0.1 cm(2)/Vs, respectively. They exhibit highly ordered smectic phases around room temperature, with softness to some extent, which make it possible homogeneous film with low defect density. Intermolecular distance in the smectic phase of 3-QTP-yne-4 is almost same as that of 3-TTP-yne-4. In this material, larger pi-conjugate system results in higher carrier mobility.