dimethyl 5-(4-nitrophenoxy)isophthalate | 208657-09-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: dimethyl 5-(4-nitrophenoxy)isophthalate
• 英文别名: dimethyl 5-(4-nitrophenoxy)benzene-1,3-dicarboxylate
• CAS: 208657-09-4
• 化学式: C₁₆H₁₃NO₇
• 分子量: 331.282
• InChiKey: YHMFELZPXGJJDY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  24
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  108
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为反应物：
  描述：

  dimethyl 5-(4-nitrophenoxy)isophthalate 、 四氢呋喃 、 、 氢气 在 钯 正己烷 作用下， 以 乙醇 为溶剂， 反应 48.0h， 以55.96 g of the second intermediate compound was obtained (the yield: 93%)的产率得到dimethyl 5-(4-aminophenoxy)isophthalate
  参考文献：
  名称：

  Benzoxazole Resin Precursor, Polybenzoxazole Resin, Resin Film And Semiconductor Device

  摘要：

  一种苯并噁唑树脂前体，包括第一重复单元，该单元由双氨基酚化合物和二羧酸化合物反应得到，其中至少一个具有金刚烷结构；一种苯并噁唑树脂前体，进一步包括第二重复单元，该单元由不具有金刚烷结构的双氨基酚化合物和不具有金刚烷结构的二羧酸化合物反应得到；通过上述苯并噁唑树脂前体的环合反应和脱水反应得到的聚苯并噁唑树脂；由苯并噁唑树脂前体或聚苯并噁唑树脂构成的树脂膜。可以从苯并噁唑树脂前体中获得具有优异耐热性和小介电常数的聚苯并噁唑树脂和树脂膜，以及使用树脂膜的半导体器件。

  公开号：

  US20080206548A1
• 作为产物：
  描述：

  5-羟基间苯二甲酸二甲酯 、 对氟硝基苯 以 水 、 N,N-二甲基甲酰胺 、 甲苯 为溶剂， 以68%的产率得到dimethyl 5-(4-nitrophenoxy)isophthalate
  参考文献：
  名称：

  EP1346975

  摘要：

  公开号：

文献信息

• Aromatic carboxylic acids, acid halides thereof and processes for preparing both
  申请人：——

  公开号：US20040068139A1

  公开（公告）日：2004-04-08

  A novel aromatic carboxylic acid useful as a material for macromolecular compounds and, in particular, for polycondensed macromolecular compounds exhibiting excellent heat resistance, an acid halide derivative thereof and a process for producing these compounds are disclosed. The aromatic carboxylic acid and the acid halide derivative thereof have structures represented general formulae (1) and (2), respectively, and can be efficiently produced from a dialkyl ester derivative of isophthalic acid and an acetylene derivative in accordance with the disclosed process comprising specific steps. 1 In the above formulae, A represents: —C≡C—R 1 ( a ) or 2 (R 1 represents hydrogen atom, an alkyl group or an aromatic group, R 2 represents an alkyl group or an aromatic group) and X represents a halogen atom.

  本发明揭示了一种新的芳香族羧酸，可用作大分子化合物的材料，特别是用于表现出优异耐热性的聚缩酸大分子化合物，以及其酸卤化衍生物和生产这些化合物的方法。所述芳香族羧酸和其酸卤化衍生物的结构分别表示为通式（1）和（2），可以通过本发明揭示的特定步骤的方法从异苯二甲酸的二烷基酯衍生物和乙炔衍生物高效地生产。在上述公式中，A表示：-C≡C-R1（a）或2（R1表示氢原子，烷基或芳香基，R2表示烷基或芳香基），X表示卤素原子。
• Method for preparing light-absorbing polymeric compositions
  申请人：——

  公开号：US20040195552A1

  公开（公告）日：2004-10-07

  The present invention recites a method comprising reacting in a solvent in the presence of a base a) at least one diacidic monomer comprising about 1 to 100 mole % of at least one light-absorbing monomer having a light absorption maximum between about 300 nm and about 1200 nm and 99-0 mole % of a non-light absorbing monomer which does not absorb significant light at wavelengths above 300 nm or has a light absorption maximum below 300 nm, with b) an organic compound of Formula II X—B—X 1 wherein B is a divalent organic radical to form a light absorbing composition comprising a mixture of a polymer having the formula 1 and a cyclic compound having the general formula 2 wherein B is as defined above; n is at least 2, m is 1, 2, 3 or 4 and A comprises the residue of a diacidic monomer comprising about 1 to 100 mole % of at least one light-absorbing monomer having a light absorption maximum between about 300 nm and about 1000 nm and wherein the remaining portion of A comprises the residue of a non-light absorbing monomer which does not absorb significant light at wavelengths above 300 nm or has a light absorption maximum below 300 nm.

  本发明涉及一种方法，包括在溶剂中，在碱的存在下反应：a）至少一种二酸单体，其中包括约1至100摩尔％的至少一种具有在300nm至1200nm之间的光吸收最大值的光吸收单体和99-0摩尔％的不吸收在300nm以上波长处的显著光或具有在300nm以下的光吸收最大值的非光吸收单体；b）式IIX-B-X1的有机化合物，其中B是二价有机基团，以形成一种光吸收组合物，该组合物包括具有式1的聚合物和具有一般式2的环状化合物，其中B如上所定义；n至少为2，m为1、2、3或4，A包括约1至100摩尔％的至少一种具有在300nm至1000nm之间的光吸收最大值的光吸收单体的残基，其中A的其余部分包括不吸收在300nm以上波长处的显著光或具有在300nm以下的光吸收最大值的非光吸收单体的残基。
• Benzoxazole Resin Precursor, Polybenzoxazole Resin, Resin Film And Semiconductor Device
  申请人：Enoki Takashi

  公开号：US20080206548A1

  公开（公告）日：2008-08-28

  A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor.

  一种苯并噁唑树脂前体，包括第一重复单元，该单元由双氨基酚化合物和二羧酸化合物反应得到，其中至少一个具有金刚烷结构；一种苯并噁唑树脂前体，进一步包括第二重复单元，该单元由不具有金刚烷结构的双氨基酚化合物和不具有金刚烷结构的二羧酸化合物反应得到；通过上述苯并噁唑树脂前体的环合反应和脱水反应得到的聚苯并噁唑树脂；由苯并噁唑树脂前体或聚苯并噁唑树脂构成的树脂膜。可以从苯并噁唑树脂前体中获得具有优异耐热性和小介电常数的聚苯并噁唑树脂和树脂膜，以及使用树脂膜的半导体器件。
• Benzoxazole resin precursor, polybenzoxazole resin, resin film and semiconductor device
  申请人：Sumitomo Bakelite Co., Ltd.

  公开号：US08337982B2

  公开（公告）日：2012-12-25

  A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor.

  一种苯并噁唑树脂前体，包括第一重复单元，该重复单元由双氨基酚化合物和二羧酸化合物反应得到，其中至少一个具有金刚烷结构；一种苯并噁唑树脂前体，进一步包括第二重复单元，该重复单元由无金刚烷结构的双氨基酚化合物和无金刚烷结构的二羧酸化合物反应得到；通过上述苯并噁唑树脂前体的环合反应和脱水反应得到的聚苯并噁唑树脂；由苯并噁唑树脂前体或聚苯并噁唑树脂构成的树脂薄膜。可以从苯并噁唑树脂前体中获得具有优异耐热性和小介电常数的聚苯并噁唑树脂和树脂薄膜，以及使用该树脂薄膜的半导体器件。
• AROMATIC CARBOXYLIC ACIDS, ACID HALIDES THEREOF AND PROCESSES FOR PREPARING BOTH
  申请人：SUMITOMO BAKELITE CO., LTD.

  公开号：EP1346975A1

  公开（公告）日：2003-09-24

  A novel aromatic carboxylic acid useful as a material for macromolecular compounds and, in particular, for polycondensed macromolecular compounds exhibiting excellent heat resistance, an acid halide derivative thereof and a process for producing these compounds are disclosed. The aromatic carboxylic acid and the acid halide derivative thereof have structures represented general formulae (1) and (2), respectively, and can be efficiently produced from a dialkyl ester derivative of isophthalic acid and an acetylene derivative in accordance with the disclosed process comprising specific steps. In the above formulae, A represents:- C≡C-R1 or (R1 represents hydrogen atom, an alkyl group or an aromatic group, R2 represents an alkyl group or an aromatic group) and X represents a halogen atom.

  本发明公开了一种新型芳香族羧酸，可用作高分子化合物的材料，特别是用于具有优异耐热性的缩聚高分子化合物，还公开了其酸性卤化物衍生物以及生产这些化合物的工艺。芳香族羧酸及其酸性卤化物衍生物的结构分别代表通式（1）和（2），可根据所公开的包括特定步骤的工艺，从间苯二甲酸的二烷基酯衍生物和乙炔衍生物中有效地制取。 在上式中，A 代表：- C≡C-R1 或 (R1代表氢原子、烷基或芳香基，R2代表烷基或芳香基），X代表卤素原子。