4-(4-acetoxy-benzenesulfonyl)-phenol | 114433-13-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚酯
• 英文名称: 4-(4-acetoxy-benzenesulfonyl)-phenol
• 英文别名: 4-(4-Acetoxy-benzolsulfonyl)-phenol；Phenol, 4-[[4-(acetyloxy)phenyl]sulfonyl]-；[4-(4-hydroxyphenyl)sulfonylphenyl] acetate
• CAS: 114433-13-5
• 化学式: C₁₄H₁₂O₅S
• 分子量: 292.312
• InChiKey: QJUPTERQUURQHZ-UHFFFAOYSA-N

物化性质

• 沸点：
  496.0±30.0 °C(Predicted)
• 密度：
  1.366±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2
• 重原子数：
  20
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.07
• 拓扑面积：
  89
• 氢给体数：
  1
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  2,2'-磺酰基二苯酚 、 苯甲酰氯 在 吡啶 、 溶剂黄146 作用下， 生成 4-(4-acetoxy-benzenesulfonyl)-phenol
  参考文献：
  名称：

  Berkman; Wisgert, Ukrainskij Khimicheskij Zhurnal, 1952, vol. 18, p. 311,312

  摘要：

  DOI：

文献信息

• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。
• SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL
  申请人：Takeda Satoshi

  公开号：US20130183830A1

  公开（公告）日：2013-07-18

  Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

  本文描述了用于形成溶剂可开发光刻胶底层膜的组合物。这些组合物可以包括一个水解性有机硅烷，其硅原子与含有受保护脂肪醇基团的有机基团结合，水解的水解性有机硅烷的水解缩合产物，或两者的组合物和溶剂。该组合物可以形成一个光刻胶底层膜，其中包括水解性有机硅烷，水解的水解性有机硅烷的水解缩合产物，或两者的组合物，硅烷化合物中的硅原子与含有受保护脂肪醇基团的有机基团的比例为总硅原子量的0.1至40%摩尔。还描述了一种将该组合物应用于半导体衬底并烘烤该组合物以形成光刻胶底层膜的方法。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150322212A1

  公开（公告）日：2015-11-12

  A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes; Formula (1): R 1 a R 2 b Si(R 3 ) 4-(a+b) wherein R 1 is an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3; Formula (2): R 4 a R 5 b Si(R 6 ) 4-(a+b) wherein, R 4 is an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

  一种可用作硬掩膜的抗蚀底层膜。一种用于光刻的抗蚀底层膜形成组合物，包括：作为硅烷的，一种可水解的硅烷，其水解产物或其水解-缩合产物，其中可水解的硅烷包括公式（1）的可水解硅烷或含有公式（1）的可水解硅烷与公式（2）的可水解硅烷的组合物，其在所有硅烷中的摩尔分数小于50％；公式（1）：R1aR2bSi（R3）4-（a+b），其中R1是含有公式（1-1），公式（1-2）或公式（1-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数；公式（2）：R4aR5bSi（R6）4-（a+b），其中R4是含有公式（2-1），公式（2-2）或公式（2-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON CONTAINING CYCLIC ORGANIC GROUP HAVING HETERO ATOM
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150249012A1

  公开（公告）日：2015-09-03

  A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a —Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom.

  一种用于光刻的抗反射层底部膜组合物，包括：硅烷：至少包括一种水解性有机硅烷、其水解产物或水解缩合产物之一，其中所述硅烷包括含有环状有机基团的硅烷，所述环状有机基团的原子包括碳原子、氮原子和除碳和氮原子以外的杂原子。所述水解性有机硅烷可以是式（1）的水解性有机硅烷，其中，R1、R2和R3中至少有一个基团是一个—Si（X）3基团与C1-10烷基团结合，而R1、R2和R3中的其他基团是氢原子、C1-10烷基团或C6-40芳基团；一个含有5-10个成员环的环状有机基团，其中环状有机基团的原子包括碳原子、至少一个氮、硫或氧原子；X是烷氧基、酰氧基或卤素原子。
• FILM-FORMING COMPOSITION CONTAINING CROSSLINKABLE REACTIVE SILICONE
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP3222688A1

  公开（公告）日：2017-09-27

  There is provided film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. A film-forming composition comprising, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1):         R1aR2bSi(R3)4-(a+b)     Formula (1) in Formula (1), R1 is organic group of Formula (2) and is bonded to silicon atom through Si-C bond: Film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group consisting of hydrolyzable silane of Formula (3):         R7cSi(R8)4-c     Formula (3) and hydrolyzable silane of Formula (4):         (R9dSi(R10)3-d]2Ye     Formula (4) Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.

  本发明提供的成膜组合物具有良好的效果，如固化性和嵌入性以及用于半导体器件光刻工艺的抗蚀底层膜。 一种成膜组合物，包括作为硅烷的可水解硅烷、其水解产物或其水解缩合产物，其中可水解硅烷包括式（1）的可水解硅烷： R1aR2bSi(R3)4-(a+b) 式(1) 在式(1)中，R1 是式(2)的有机基团，并通过 Si-C 键与硅原子结合： 成膜组合物，其中可水解硅烷是式(1)的可水解硅烷与另一种可水解硅烷的组合，其中另一种可水解硅烷至少是从式(3)的可水解硅烷组成的组中选出的一种： R7cSi(R8)4-c 式(3) 和式 (4) 的可水解硅烷： (R9dSi(R10)3-d]2Ye 式（4） 将抗蚀剂底层成膜组合物涂在半导体衬底上并烘烤而得到的抗蚀剂底层薄膜。