unprecedented complex [2‐[CH(CH2)3CH3}(μ‐OH)]‐6‐CH2NMe2}C6H3]GaS (4) was also isolated as the minor by‐product of the reaction. Compounds 1–3 were further studied as potential single‐source precursors for amorphous GaS thin film deposition by spin‐coating.
我们的研究集中在N→Ga配位的有机
镓硫化物[L 1 Ga(μ‐S)] 3(1)和[L 2 Ga(μ‐S)] 2(2)的合成中,其中N,C, N-或C,N-螯合
配体L 1或L 2(L 1是2,6-(Me 2 NCH 2)2 C 6 H 3 } -和L 2是2-(Et 2 NCH 2)- 4,6‐ t Bu 2‐ C 6 H 2 } −)。由于不同的
配体,化合物1和2的结构相互不同。要改变的Ga / S比,异常Ñ→嘎协调有机
镓四
硫化物大号1
镓(κ 2 -S 4)(3)制备和前所未有复杂[2- [CH (CH 2)3 CH 3 }( (μ-OH)]-6-CH 2 NMe 2 } C 6 H 3 ] GaS(4)也作为反应的次要副产物被分离出来。化合物1 - 3 进一步研究了通过旋涂法沉积非晶态GaS薄膜的潜在单源前驱体。