methyl 3-methoxy-2-hydroxy butanoate | 107686-09-9

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: methyl 3-methoxy-2-hydroxy butanoate
• 英文别名: Methyl 2-hydroxy-3-methoxybutanoate
• CAS: 107686-09-9
• 化学式: C₆H₁₂O₄
• 分子量: 148.159
• InChiKey: MDBHXNGCJFQTME-UHFFFAOYSA-N

物化性质

• 沸点：
  220.3±20.0 °C(Predicted)
• 密度：
  1.091±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  -0.2
• 重原子数：
  10
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.83
• 拓扑面积：
  55.8
• 氢给体数：
  1
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  methyl trans-(2R,3S)-2,3-epoxybutyrate 、 乙醇 、 二氯甲烷 生成 methyl 3-methoxy-2-hydroxy butanoate
  参考文献：
  名称：

  RIEGO J.; COSTA A.; SAA J. M., CHEM. LETT.,(1986) N 9, 1565-1568

  摘要：

  DOI：

文献信息

• Regioselective AlPO₄–Al₂O₃Promoted Ring-Opening of 2,3-Epoxy Esters
  作者：Juan Riego、Antonio Costa、José Manuel Saa

  DOI：10.1246/cl.1986.1565

  日期：1986.9.5

  Synthetic AlPO4–Al2O3 promotes regioselective ring-opening of 2,3-epoxy esters by some oxygen and sulphur nucleophiles. Ritter type ring-opening with acetonitrile allowed the regioselective introduction of the acetamido group.

  合成的 AlPO4-Al2O3 在某些氧和硫亲核物的作用下可促进 2,3-环氧酯的区域选择性开环。用乙腈进行里特式开环可实现乙酰氨基的区域选择性引入。
• Resist underlayer film-forming composition containing polymer having arylene group
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10394124B2

  公开（公告）日：2019-08-27

  A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2), wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.

  一种用于光刻工艺的抗蚀剂底层成膜组合物，其特点是成膜后可使晶片表面平整化，在有水平差异的基底上具有优异的平整化性能，以及在细孔图案中具有良好的嵌入性。光刻胶底层成膜组合物包括具有式（1）单元结构的聚合物和溶剂、 其中 R1 至 R4 各自独立地为氢原子或甲基，X1 为二价有机基团，其中至少有一个芳烯基团可选地被烷基、氨基或羟基取代，且式（1）中的 X1 为式（2）的有机基团、 其中 A1 为亚苯基或萘基，A2 为亚苯基、萘基或式 (3) 的有机基团，虚线为键，以及 其中 A3 和 A4 各自独立地为亚苯基或亚萘基，虚线为键。
• RIEGO J.; COSTA A.; SAA J. M., CHEM. LETT.,(1986) N 9, 1565-1568
  作者：RIEGO J.、 COSTA A.、 SAA J. M.

  DOI：——

  日期：——
• RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYMER HAVING ARYLENE GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170315445A1

  公开（公告）日：2017-11-02

  A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R 1 to R 4 is independently hydrogen atom or methyl group, and X 1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X 1 in Formula (1) is organic group of Formula (2), wherein A 1 is phenylene group or naphthylene group, A 2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A 3 and A 4 is independently phenylene group or naphthylene group, and dotted line is bond.