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5-[[5-[(1,3-Dimethyl-4,6-dioxo-2-sulfanylidene-1,3-diazinan-5-ylidene)methyl]thieno[3,2-b]thiophen-2-yl]methylidene]-1,3-dimethyl-2-sulfanylidene-1,3-diazinane-4,6-dione | 1566578-97-9

中文名称
——
中文别名
——
英文名称
5-[[5-[(1,3-Dimethyl-4,6-dioxo-2-sulfanylidene-1,3-diazinan-5-ylidene)methyl]thieno[3,2-b]thiophen-2-yl]methylidene]-1,3-dimethyl-2-sulfanylidene-1,3-diazinane-4,6-dione
英文别名
5-[[5-[(1,3-dimethyl-4,6-dioxo-2-sulfanylidene-1,3-diazinan-5-ylidene)methyl]thieno[3,2-b]thiophen-2-yl]methylidene]-1,3-dimethyl-2-sulfanylidene-1,3-diazinane-4,6-dione
5-[[5-[(1,3-Dimethyl-4,6-dioxo-2-sulfanylidene-1,3-diazinan-5-ylidene)methyl]thieno[3,2-b]thiophen-2-yl]methylidene]-1,3-dimethyl-2-sulfanylidene-1,3-diazinane-4,6-dione化学式
CAS
1566578-97-9
化学式
C20H16N4O4S4
mdl
——
分子量
504.635
InChiKey
DVPADSMILOVJRH-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.8
  • 重原子数:
    32
  • 可旋转键数:
    2
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.2
  • 拓扑面积:
    202
  • 氢给体数:
    0
  • 氢受体数:
    8

反应信息

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文献信息

  • [EN] PHOTOACTIVE OPTOELECTRONIC AND TRANSISTOR DEVICES<br/>[FR] DISPOSITIFS OPTOÉLECTRONIQUES PHOTOACTIFS ET À TRANSISTORS
    申请人:COMMW SCIENT IND RES ORG
    公开号:WO2014026244A1
    公开(公告)日:2014-02-20
    The present invention relates to photoactive optoelectronic devices, such as organic photovoltaic devices, and transistor devices, and to organic compounds for use in the optoelectronic and transistor devices. The present invention also relates to processes for preparing photoactive optoelectronic and transistor devices. The photoactive optoelectronic devices comprise a first and second electrode, and at least one organic light-absorbing electroactive layer in electrical connection with the first and second electrodes that generates an electrical current in response to electromagnetic radiation. The light-absorbing electroactive layer comprises an electron donor material and an electron acceptor material, the electron acceptor material comprising a compound as described herein.
  • <i>N</i>-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs
    作者:Ying Shu、Annabel Mikosch、Kevin N. Winzenberg、Peter Kemppinen、Christopher D. Easton、Ante Bilic、Craig M. Forsyth、Christopher J. Dunn、Th. Birendra Singh、Gavin E. Collis
    DOI:10.1039/c4tc00002a
    日期:——

    Modification of the barbituric acid acceptor group results in structural and optoelectronic changes that provide electron mobilities nearing 0.3 cm2 V−1 s−1.

    对巴比妥酸受体基团的修改导致了结构和光电变化,从而提供了接近0.3 cm2 V−1 s−1的电子迁移率。
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