Molecular phase engineering of organic semiconductors based on a [1]benzothieno[3,2-b][1]benzothiophene core
作者:Yaowu He、Wenjun Xu、Imran Murtaza、Dongwei Zhang、Chao He、Yanan Zhu、Hong Meng
DOI:10.1039/c6ra22999a
日期:——
(C6-Ph-BTBT), are prepared by Suzuki coupling. Organic thin-film transistors with a top-contact and bottom-gate based on BTBT, Ph-BTBT and C6-Ph-BTBT are fabricated by vacuum-deposition on octyltrichlorosilane treated Si/SiO2 substrates. Experimental results show that the thin-film based on BTBT sublimes instantly after the deposition of electrodes, and no semiconductor signal is detected. Ph-BTBT shows a mobility
两个环境和热稳定的[1]苯并噻吩并[3,2- b ] [1]苯并噻吩(BTBT)衍生物,2-苯基[1]苯并噻吩并[3,2- b ] [1]苯并噻吩(Ph-BTBT)和2通过铃木偶联制备-(4-己基苯基)[1]苯并噻吩并[3,2- b ] [1]苯并噻吩(C6-Ph-BTBT)。通过在辛基三氯硅烷处理的Si / SiO 2衬底上进行真空沉积,制造了基于BTBT,Ph-BTBT和C6-Ph-BTBT的具有顶部接触和底部栅极的有机薄膜晶体管。实验结果表明,基于BTBT的薄膜在沉积电极后立即升华,没有检测到半导体信号。Ph-BTBT的迁移率为0.034 cm 2 V -1 s -1。此外,C6-Ph-BTBT表现出三个液晶相(Sm A,Sm E和Sm K或H),并以4.6× 2 V -1 s -1的最高通断率达到2.2×10的最高空穴迁移率7用于环境空气中的多晶有机薄膜晶体管。本研究例证了在分子设