orthovanadic acid tri-tert.-pentyl ester | 57499-98-6

• 分子结构分类: 有机化合物 - 有机氧化合物 - 有机含氧阴离子化合物
• 英文名称: orthovanadic acid tri-tert.-pentyl ester
• 英文别名: VO(OAm-t)3
• CAS: 57499-98-6
• 化学式: C₁₅H₃₃O₄V
• 分子量: 328.366
• InChiKey: NXUUOHLORUHORA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.42
• 重原子数：
  20.0
• 可旋转键数：
  6.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  44.76
• 氢给体数：
  0.0
• 氢受体数：
  4.0

反应信息

• 作为反应物：
  描述：

  orthovanadic acid tri-tert.-pentyl ester 在 H₂ 作用下， 以 异丙醇 为溶剂， 生成 vanadium(IV) oxide
  参考文献：
  名称：

  Switching properties of V1 − xTixO2 thin films deposited from alkoxides

  摘要：

  TiO2-doped vanadium dioxide films have been deposited from vanadium oxo-alkoxide solutions. VO2 thin films of good optical quality are obtained after heating at 500 degrees C under a reducing atmosphere. These films exhibit highly reversible electrical and optical switching around 70 degrees C. A hysteresis phenomenon is observed, but V1-xTixO2 films do not exhibit the same behavior as other doped VO2 films. The width of the hysteresis curve decreases as soon as Ti is added to the VO2 film. Best switching characteristics are obtained with Ti approximate to 5%. Evidence of the coexistence of two phases around the transition temperature is presented. (C) 1997 Elsevier Science Ltd.

  DOI：

  10.1016/s0025-5408(97)00084-6
• 作为产物：
  描述：

  2-甲基-2-丁醇 、 vanadia 以 neat (no solvent) 为溶剂， 生成 orthovanadic acid tri-tert.-pentyl ester
  参考文献：
  名称：

  Prandl, W.; Hess, L., Zeitschrift fur Anorganische und Allgemeine Chemie

  摘要：

  DOI：

文献信息

• Reactivity of new azido-complexes of titanium and vanadium
  作者：Robert Choukroun、Dani�le Gervais

  DOI：10.1039/dt9800001800

  日期：——

  Mono- and bis-azido-complexes of TiIV and VV have been prepared in good yield from chloro- or alkoxo-derivatives of the transition metal, using SiMe3(N3) as azide source. The stable azides [Ti(η-C5H5)Cl2(N3)], [Ti(OPri)2(N3)2], [TiCl(OPri)2(N3)], [VO(OPri)(N3)2], and [VO(OCH2But)(N3)2] have been isolated and characterized. The azido-group can be displaced by reaction with protic reagents and HN3 is

  使用SiMe 3（N 3）作为叠氮化物来源，由过渡金属的氯或烷氧基衍生物以高收率制备了Ti IV和V V的单叠氮基和双叠氮基复合物。稳定的叠氮化物钛[Ti（η-C 5 H ^ 5）氯2（N 3）]，[钛（OPR我）2（N 3）2 ]，[的TiCl（OPR我）2（N 3）]，[VO （OPr i）（N 3）2 ]和[VO（OCH 2 Bu t）（N 3）2]已经被分离和表征。叠氮基可通过与质子试剂反应而置换，并消除HN 3。所述化合物还与膦反应形成膦酰氨基络合物，并消除了N 2。
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: V: MVol.B1, 41, page 93 - 95
  作者：

  DOI：——

  日期：——
• Orlov, N. F.; Voronkov, M. G., 1959, p. 933 - 934
  作者：Orlov, N. F.、Voronkov, M. G.

  DOI：——

  日期：——
• Microstructure and metal-insulating transition of vo2 thin films
  作者：Fabien Béteille、Léo Mazerolles、Jacques Livage

  DOI：10.1016/s0025-5408(99)00232-9

  日期：1999.11

  Vanadium oxide thin films were deposited from alkoxide precursors. Upon a thermal treatment under a reducing atmosphere, they led to crystalline VO2, which exhibited the well-known metal-semiconducting transition. The shape and width of the hysteresis curve were related-to the microstructure of the films and strongly depend on the preparation procedure. (C) 2000 Elsevier Science Ltd.