N-Boc-L-哌啶酸乙酯 | 502633-94-5

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 中文名称: N-Boc-L-哌啶酸乙酯
• 英文名称: N-Boc-L-pipecolic acid ethyl ester
• 英文别名: (S)-1-tert-Butyl 2-ethyl piperidine-1,2-dicarboxylate；1-O-tert-butyl 2-O-ethyl (2S)-piperidine-1,2-dicarboxylate
• CAS: 502633-94-5
• 化学式: C₁₃H₂₃NO₄
• mdl: MFCD03788452
• 分子量: 257.33
• InChiKey: KBDNAOCLKIBYPH-JTQLQIEISA-N

物化性质

• 沸点：
  323.9±35.0 °C(Predicted)
• 密度：
  1.077±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  18
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.85
• 拓扑面积：
  55.8
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  N-Boc-L-哌啶酸乙酯 在 二异丁基氢化铝 作用下， 以60%的产率得到(S)-2-甲酰基-1-哌啶甲酸叔丁酯
  参考文献：
  名称：

  Sheet resistance of GaAs conductive layers isolated by proton irradiation

  摘要：

  A simple null charge model was employed to describe GaAs sheet resistance evolution as a function of proton implantation fluence using a previous knowledge of the irradiation created defect characteristics. In the specific case of GaAs irradiated with protons, three different irradiation related defect schemes were analyzed. Data obtained by both n-type and p-type majority carrier DLTS should be used together to give correct information about compensating deep centers. For a good estimation of isolation process by ion irradiation, not only the defects energy levels and introduction rates must be obtained, but also the corresponding charge transitions should be known. (c) 2005 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.nimb.2005.11.149
• 作为产物：
  描述：

  L-哌啶-2-甲酸 在 碳酸氢钠 作用下， 以 甲醇 为溶剂， 生成 N-Boc-L-哌啶酸乙酯
  参考文献：
  名称：

  Sheet resistance of GaAs conductive layers isolated by proton irradiation

  摘要：

  A simple null charge model was employed to describe GaAs sheet resistance evolution as a function of proton implantation fluence using a previous knowledge of the irradiation created defect characteristics. In the specific case of GaAs irradiated with protons, three different irradiation related defect schemes were analyzed. Data obtained by both n-type and p-type majority carrier DLTS should be used together to give correct information about compensating deep centers. For a good estimation of isolation process by ion irradiation, not only the defects energy levels and introduction rates must be obtained, but also the corresponding charge transitions should be known. (c) 2005 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.nimb.2005.11.149

文献信息

• THERAPEUTICALLY ACTIVE COMPOSITIONS AND THEIR METHODS OF USE
  申请人：Cao Sheldon

  公开号：US20140206673A1

  公开（公告）日：2014-07-24

  Provided are compounds of formula (I), wherein X, Y, Z, W, V, R 2 , R 3 and m are defined as in the description. Their pharmaceutical compositions and their uses for treating cancers are also provided.

  提供了式(I)的化合物，其中X、Y、Z、W、V、R2、R3和m的定义如描述中所述。还提供了它们的药物组合物以及用于治疗癌症的用途。
• Compounds and methods for antiviral treatment
  申请人：Gilead Sciences, Inc.

  公开号：US10174038B2

  公开（公告）日：2019-01-08

  Compounds and pharmaceutically acceptable salts and esters and compositions thereof, for treating viral infections are provided. The compounds and compositions are useful for treating Pneumovirinae virus infections. The compounds, compositions, and methods provided are particularly useful for the treatment of Human respiratory syncytial virus infections.

  本研究提供了用于治疗病毒感染的化合物、药学上可接受的盐类和酯类及其组合物。这些化合物和组合物可用于治疗肺炎病毒感染。所提供的化合物、组合物和方法尤其适用于治疗人类呼吸道合胞病毒感染。
• US9662327B2
  申请人：——

  公开号：US9662327B2

  公开（公告）日：2017-05-30
• Sheet resistance of GaAs conductive layers isolated by proton irradiation
  作者：A.V.P. Coelho、H. Boudinov

  DOI：10.1016/j.nimb.2005.11.149

  日期：2006.4

  A simple null charge model was employed to describe GaAs sheet resistance evolution as a function of proton implantation fluence using a previous knowledge of the irradiation created defect characteristics. In the specific case of GaAs irradiated with protons, three different irradiation related defect schemes were analyzed. Data obtained by both n-type and p-type majority carrier DLTS should be used together to give correct information about compensating deep centers. For a good estimation of isolation process by ion irradiation, not only the defects energy levels and introduction rates must be obtained, but also the corresponding charge transitions should be known. (c) 2005 Elsevier B.V. All rights reserved.