Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof
申请人:——
公开号:US20010010867A1
公开(公告)日:2001-08-02
The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (
5
), a ferroelectric capacitor (
10
) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
本发明公开了一种用于形成含有 Bi、金属元素 A(至少一种选自 Bi、Pb、Ba、Sr、Ca、Na、K 和稀土元素)和金属元素 B(至少一种选自 Ti、Nb、Ta、W、Mo、Fe、Co 和 Cr)的 Bi 基铁电薄膜的涂层溶液,其中它分别含有 Bi、金属元素 A 和金属元素 B 的金属烷氧基化合物,以及通过水解由任意两种金属烷氧基化合物形成的复合金属烷氧基化合物而获得的有机金属化合物、Co和Cr),其中分别含有Bi、金属元素A和金属元素B的金属烷氧基,以及由任意两种或两种以上所述金属烷氧基与水单独或与催化剂结合水解形成的复合金属烷氧基而获得的有机金属化合物,其中Bi的摩尔量为1-1.1 倍;铁电薄膜 (
5
)、铁电容器 (
10
) 和铁电存储器;以及生产这些产品的方法。