1-butoxy-1-formyloxy-ethane | 856371-54-5

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 1-butoxy-1-formyloxy-ethane
• 英文别名: formic acid-(1-butoxy-ethyl ester)；Ameisensaeure-(1-butoxy-aethylester)；1-Butoxyethyl formate
• CAS: 856371-54-5
• 化学式: C₇H₁₄O₃
• 分子量: 146.186
• InChiKey: IBWZGGYISTZCQN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  10
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  1-butoxy-1-formyloxy-ethane 、 磷二氯酸根亚盐丙基 生成 bis-(1-butoxy-ethyl)-diphosphonic acid dipropyl ester
  参考文献：
  名称：

  Gazizov,M.B. et al., Journal of general chemistry of the USSR, 1974, vol. 44, p. 1233 - 1237

  摘要：

  DOI：
• 作为产物：
  描述：

  甲酸 、 乙烯基正丁醚 生成 1-butoxy-1-formyloxy-ethane
  参考文献：
  名称：

  Schostakowskii; Gerschtein, Zhurnal Obshchei Khimii, 1951, vol. 21, p. 1452,1455; engl.Ausg. S.1581,1583

  摘要：

  DOI：

文献信息

• Radiation-sensitive resin composition
  申请人：——

  公开号：US20020009668A1

  公开（公告）日：2002-01-24

  A radiation-sensitive resin composition comprising an acid-labile group-containing resin and a photoacid generator is disclosed. The resin has a structure of the formula (1), 1 wherein R 1 represents a hydrogen atom, a monovalent acid-labile group, an alkyl group having 1-6 carbon atoms which does not have an acid-labile group, or an alkylcarbonyl group having 2-7 carbon atoms which does not have an acid-labile group, X 1 represents a linear or branched fluorinated alkyl group having 1-4 carbon atoms, and R 2 represents a hydrogen atom, a linear or branched alkyl group having 1-10 carbon atoms, or a linear or branched fluorinated alkyl group having 1-10 carbon atoms. The resin composition exhibits high transmittance of radiation, high sensitivity, resolution, and pattern shape, and is useful as a chemically amplified resist in producing semiconductors at a high yield.

  公开了一种辐射敏感的树脂组合物，包括一个含有酸敏感基团的树脂和一个光酸发生剂。该树脂的结构式为(1)，其中R1代表氢原子、一价酸敏感基团、不含酸敏感基团的1-6个碳原子的烷基或不含酸敏感基团的2-7个碳原子的烷基酰基，X1代表线性或支链的含有1-4个碳原子的氟化烷基，R2代表氢原子、含有1-10个碳原子的线性或支链烷基，或含有1-10个碳原子的线性或支链氟化烷基。该树脂组合物表现出辐射的高透过率、高敏感度、分辨率和图案形状，可用于在高产率下生产半导体中的化学放大图案。
• Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
  申请人：NEC CORPORATION

  公开号：US20030224297A1

  公开（公告）日：2003-12-04

  Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]octane-2-yl group expressed by general formula (1) 1 where each of L 1 , L 2 , L 3 , L 4 , L 5 and L 6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L 5 and L 6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

  化学增感型光刻胶是基于含有3-氧代-4-氧杂双环[3.2.1]辛烷-2-基基团的乙烯基聚合物制备的，其通式为（1）1，其中L1、L2、L3、L4、L5和L6中的每个都选择自氢原子和碳数为1到8的烷基组成的群，L5和L6的氢原子和/或烷基被具有碳数为1到10的亚烷基替换，并相互键合形成环，以使光刻胶具有高于或等于220纳米波长的光透明度，对干法刻蚀具有较大的抗性，并且对基底有良好的附着力。
• Monomer having fluorine-containing acetalor ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same
  申请人：Maeda Katsumi

  公开号：US20050164119A1

  公开（公告）日：2005-07-28

  As a polymer exhibiting improved transparency which is suitable for a resist resin used in a chemical-amplification-type resist being applicable for photolithography using exposure light at 180 nm or shorter, this invention provides a polymer comprising a repeating unit resulting from polymerization of a monomer exhibiting a polymerization activity, wherein the monomer has a fluorine-containing acetal or ketal structure represented by general formula (1): wherein R represents an atomic group containing a carbon-carbon double bond exhibiting polymerization activity; at least one of R 1 and R 2 is fluorinated alkyl group or fluorinated aryl group having 1 to 20 carbon atoms; and R 3 represents a radical selected from the group consisting of hydrogen atom, alkyl group, alkoxy-substituted alkyl group, fluorinated alkyl group, aryl group, fluorinated aryl group, aralkyl group and fluorinated aralkyl group having 1 to 20 carbon atoms.

  本发明提供了一种透明度改善的聚合物，适用于化学放大型光刻胶中使用的抗性树脂，可用于在180纳米或更短波长的曝光光下进行光刻。该聚合物包括由具有聚合活性的单体聚合得到的重复单元，其中该单体具有由通式（1）表示的含氟缩醛或缩酮结构： 其中，R表示含有聚合活性的碳碳双键的原子基团；R1和R2中至少一个是具有1至20个碳原子的含氟烷基或含氟芳基；R3表示从氢原子、烷基、烷氧基取代的烷基、含氟烷基、芳基、含氟芳基、芳基烷基和含氟芳基烷基等基团中选择的一个基团。
• Chemical amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
  申请人：NEC CORPORATION

  公开号：US20030097008A1

  公开（公告）日：2003-05-22

  Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo [3.2.1 ]octane-2-yl group expressed by general formula (1) 1 where each of L 1 , L 2 , L 3 , L 4 , L 5 and L 6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L 5 and L 6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.

  化学增感型光刻胶是基于含有3-氧代-4-氧杂双环[3.2.1]辛烷-2-基基团的乙烯基聚合物制备的，该基团由通式（1）表示，其中L1、L2、L3、L4、L5和L6中的每一个均选自于氢原子和碳数为1至8的烷基组成的群体，且在L5和L6处的氢原子和/或烷基被替换为碳数为1至10的亚烷基组，它们彼此相连形成环，以使光刻胶对小于或等于220纳米波长的光具有高透明度，对干法刻蚀具有较大的抵抗力，并且与基底有良好的附着性。
• VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS
  申请人：JSR Corporation

  公开号：EP1231205A1

  公开（公告）日：2002-08-14

  Vinylphenylpropionic acid derivatives; processes for producing the derivatives; polymers of the same; and radiosensitive resin compositions containing the polymers. The above polymers exhibit low radiation absorption and are useful as the resin component of radiosensitive resin compositions particularly suitable for chemically amplified resists. For example, t-butyl 4-vinylphenylpropionate is produced by (1) reacting t-butyl bromoacetate with tri(n-butyl)phosphine to obtain a quaternary phosphonium salt, (2) reacting this salt with a base to obtain a phosphorus ylide, (3) reacting this ylide with 2,4,6-tris(3',5'-di-t-butyl-4'-hydroxybenzyl)methyl-styrene to obtain a quaternary phosphonium salt, and (4) hydrolyzing this salt.

  乙烯基苯丙酸衍生物；生产该衍生物的工艺；该衍生物的聚合物；以及含有该聚合物的辐射敏感树脂组合物。上述聚合物的辐射吸收率低，可用作辐射敏感树脂组合物的树脂成分，尤其适用于化学放大抗蚀剂。例如，4-乙烯基苯基丙酸叔丁酯是通过以下方法制得的：(1) 将溴乙酸叔丁酯与三(正丁基)膦反应，得到季鏻盐、(2) 将这种盐与碱反应，得到一种磷酰亚胺； (3) 将这种酰亚胺与 2,4,6-三（3',5'-二-叔丁基-4'-羟基苄基）甲基苯乙烯反应，得到一种季鏻盐； (4) 将这种盐水解。