Pân junction solar cells based on anthradithiophene (ADT) as a p-type semiconductor were fabricated by using the photoprecursor method in which an α-diketone-type precursor was spin-coated and then transformed to ADT in situ by photoirradiation. Combination with PC71BM as an n-layer material led to 1.54% photoconversion efficiency.
采用光前驱体法制备了以
蒽并
噻吩(ADT)为p型半导体的P-n结太阳能电池,其中α-二酮型前驱体被旋涂,然后通过光辐照原位转化为ADT。与 PC71BM 结合作为 n 层材料,光电转换效率为 1.54%。