2,6-di(trimethylstannyl)-3,7-diheptadecylthieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophene | 1357462-11-3

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 噻吩并噻吩类
• 英文名称: 2,6-di(trimethylstannyl)-3,7-diheptadecylthieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophene
• 英文别名: P2TDC17FT4；2,6-Di(trimethylstannyl)-3,7-diheptadecylthieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophene；[5,12-di(heptadecyl)-11-trimethylstannyl-3,7,10,14-tetrathiatetracyclo[6.6.0.02,6.09,13]tetradeca-1(8),2(6),4,9(13),11-pentaen-4-yl]-trimethylstannane
• CAS: 1357462-11-3
• 化学式: C₅₀H₈₈S₄Sn₂
• 分子量: 1054.93
• InChiKey: IJFGICUQSZGRLE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  19.31
• 重原子数：
  56
• 可旋转键数：
  34
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  113
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  2,6-dibromo-3,7-diheptadecylthieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophene 在 正丁基锂 、 三甲基氯化锡 作用下， 以97%的产率得到2,6-di(trimethylstannyl)-3,7-diheptadecylthieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophene
  参考文献：
  名称：

  Scalable Synthesis of Fused Thiophene-Diketopyrrolopyrrole Semiconducting Polymers Processed from Nonchlorinated Solvents into High Performance Thin Film Transistors

  摘要：

  The synthesis and characterization of a fused thiophene-diketopyrrolopyrrole based semiconducting polymer PTDPPTFT4 is presented. A number of synthetic challenges have been overcome in the development of a practical scalable synthesis. Characterization by Gel Permeation Chromatography (GPC) over a range of temperatures has revealed the tendency of this polymer to aggregate even at elevated temperatures and confirmed that the molecular weight values obtained are for nonaggregated material. This polymer meets a number of important requirements for potential industrial applications, such as scalable synthesis, solubility in industrially suitable solvents, and material stability and processability into stable high performance thin film transistor devices. Computational modeling has been used to help explain the structure property relationships contributing to the high performance. Grazing incidence X-ray of the thin films showed out of plane lamellar packing and in plane pi-pi stacking, both good indicators of a preferentially oriented thin film, desirable for high charge carrier mobility. Hole mobilities in excess of 2 cm(2)/V.s, on/off ratio of >10(6), and threshold voltage <2 V have been achieved.

  DOI：

  10.1021/cm303953e

文献信息

• [EN] CONJUGATED FUSED THIOPHENES, METHODS OF MAKING CONJUGATED FUSED THIOPHENES, AND USES THEREOF<br/>[FR] THIOPHÈNES FUSIONNÉS CONJUGUÉS, PROCÉDÉS DE FABRICATION DE THIOPHÈNES FUSIONNÉS CONJUGUÉS ET LEURS UTILISATIONS
  申请人：CORNING INC

  公开号：WO2013066732A1

  公开（公告）日：2013-05-10

  Described herein are compositions including heterocyclic organic compounds based on fused thiophene compounds, polymers based on fused thiophene compounds, and methods for making the monomers and polymer along with uses in thin film-based and other devices.

  本文描述了包括基于融合噻吩化合物的杂环有机化合物、基于融合噻吩化合物的聚合物，以及制备单体和聚合物的方法，以及在薄膜基和其他设备中的用途。
• Scalable Synthesis of Fused Thiophene-Diketopyrrolopyrrole Semiconducting Polymers Processed from Nonchlorinated Solvents into High Performance Thin Film Transistors
  作者：James R. Matthews、Weijun Niu、Adama Tandia、Arthur L. Wallace、Jieyu Hu、Wen-Ya Lee、Gaurav Giri、Stefan C. B. Mannsfeld、Yingtao Xie、Shucheng Cai、Hon Hang Fong、Zhenan Bao、Mingqian He

  DOI：10.1021/cm303953e

  日期：2013.3.12

  The synthesis and characterization of a fused thiophene-diketopyrrolopyrrole based semiconducting polymer PTDPPTFT4 is presented. A number of synthetic challenges have been overcome in the development of a practical scalable synthesis. Characterization by Gel Permeation Chromatography (GPC) over a range of temperatures has revealed the tendency of this polymer to aggregate even at elevated temperatures and confirmed that the molecular weight values obtained are for nonaggregated material. This polymer meets a number of important requirements for potential industrial applications, such as scalable synthesis, solubility in industrially suitable solvents, and material stability and processability into stable high performance thin film transistor devices. Computational modeling has been used to help explain the structure property relationships contributing to the high performance. Grazing incidence X-ray of the thin films showed out of plane lamellar packing and in plane pi-pi stacking, both good indicators of a preferentially oriented thin film, desirable for high charge carrier mobility. Hole mobilities in excess of 2 cm(2)/V.s, on/off ratio of >10(6), and threshold voltage <2 V have been achieved.