performance of P1 and P2, the corresponding memory device can be fabricated with the configuration of platinum (50 nm)/polymer (100 nm)/platinum (150 nm)/silicon. In contrast with the P2‐based device with almost negligible switching and memristive behavior, the P1‐based memristor exhibits a maximum ILRS/IHRS ratio of about 10 (ILRS and IHRS are the current values in the low‐resistance state (LRS) and
两种新的供体(D)-受体(A)共聚物,聚(4,4'-[4,4'-(9 H-
芴-9,9-二基)双(4,1-亚
苯基)] bis(
氧)二邻
苯二甲腈} alt ‐ [dithieno [3,2- b:2',3'- d ]
吡咯])(P1)和聚(4,4'-[4,4'-(9 H-
芴) -9,9-二基)双(4,1-亚
苯基)]双(
氧基)二邻
苯二甲腈} -alt -([[1,2- b:4,5-b'] dithiophene))(P2)是通过Stille偶联反应设计和合成的。P1(10.71德拜)的偶极矩大于P2(6.59德拜)的偶极矩。强大的偶极矩有助于维持导电电荷转移状态。为了评估P1和P2的非易失性忆阻性能,可以使用
铂(50 nm)/
聚合物(100 nm)/
铂(150 nm)/
硅的构造来制造相应的存储器件。与开关和忆阻行为几乎可忽略的基于P2的器件相比,基于P1的忆阻器的最大I LRS / I HRS比约为10(I