Solid-State NMR, X-Ray Diffraction, and Theoretical Studies of Neutral Mononuclear Molecular Bis(triphenylphosphine)silver(I) Mono-Carboxylate and -Nitrate Systems
作者:Simon Grabowsky、Allan H. White、Peter C. Healy、Kim M. Lapere、Seik Weng Ng、Brian W. Skelton、Duncan A. Wild、Graham A. Bowmaker、John V. Hanna
DOI:10.1071/ch19616
日期:——
these complexes contain P2AgO2 molecular cores with four-coordinate silver in which the carboxylate ligands are weakly bound to the silver atoms via the two oxygen atoms giving rise to unsymmetrical chelate units. Crystal structure determinations and solid-state NMR spectra have also been analysed for the mononuclear molecular silver(i) nitrate complex [(Ph3P)2Ag(O2NO)] (9α) and two polymorphs of its
METHOD OF MANUFACTURING AN ELECTROMAGNETIC INTERFERENCE SHIELDING LAYER
申请人:Heraeus Deutschland GmbH & Co KG
公开号:EP3648161A1
公开(公告)日:2020-05-06
The present invention relates to a method of manufacturing a semiconductor package, which is at least in part covered by an electromagnetic interference shielding layer, comprising at least these steps: i. Providing the semiconductor package and an ink composition; wherein the ink composition comprises at least these constituents: a) A compound comprising at least one metal precursor; b) At least one organic compound; and ii. Applying at least a part of the ink composition onto the semiconductor package, wherein a precursor layer is formed; iii. Treating the precursor layer with an irradiation of a peak wavelength in the range from 100 nm to 1 mm, and to a semiconductor package comprising an electromagnetic interference shielding layer comprising at least one metal, wherein the semiconductor package is obtainable by the aforementioned method. The present invention relates also to a semiconductor package comprising a electromagnetic interference shielding layer, wherein the specific conductance of the first layer of electromagnetic interference shielding material is in the range from 5 to 90 % of bulk metal; and wherein the thickness of the first layer of electromagnetic interference shielding material is in the range from 5 nm to 5 µm. The present invention relates further to some uses of an ink composition.
本发明涉及一种至少部分由电磁干扰屏蔽层覆盖的半导体封装的制造方法,该方法至少包括以下步骤: i. 提供半导体封装和油墨组合物;其中油墨组合物至少包括以下成分: a) 由至少一种金属前体组成的化合物; b) 至少一种有机化合物;以及 ii.将至少一部分油墨组合物涂在半导体封装上,其中形成前驱体层; iii.用峰值波长在 100 nm 至 1 mm 范围内的辐照处理前驱体层,以及包含由至少一种金属组成的电磁干扰屏蔽层的半导体封装,其中半导体封装可通过上述方法获得。本发明还涉及一种包含电磁干扰屏蔽层的半导体封装,其中第一层电磁干扰屏蔽材料的比电导率在块状金属的 5% 至 90% 之间;第一层电磁干扰屏蔽材料的厚度在 5 nm 至 5 µm 之间。本发明还涉及油墨组合物的一些用途。