Thermally, Operationally, and Environmentally Stable Organic Thin-Film Transistors Based on Bis[1]benzothieno[2,3-<i>d</i>:2′,3′-<i>d</i>′]naphtho[2,3-<i>b</i>:6,7-<i>b</i>′]dithiophene Derivatives: Effective Synthesis, Electronic Structures, and Structure–Property Relationship
作者:Masahiro Abe、Takamichi Mori、Itaru Osaka、Kunihisa Sugimoto、Kazuo Takimiya
DOI:10.1021/acs.chemmater.5b01608
日期:2015.7.28
By developing an efficient synthetic route to the bis[1]benzothieno[2,3-d;2′,3′-d′]naphtho[2,3-b;6,7-b′]dithiophene (BBTNDT) framework, we have successfully synthesized new BBTNDT derivatives with phenyl (DPh-BBTNDT) or n-hexyl groups (C6-BBTNDT) at the 2 and 10 positions. Characterization of their vapor-deposited thin films revealed that, depending on the substituents introduced, their HOMO energy levels were slightly altered, and DPh-BBTNDT with the HOMO energy level of ca. 5.3 eV was supposed to be a stable organic semiconductor under ambient conditions. In fact, the DPh-BBTNDT-based OTFTs showed not only high mobility of up to 7.0 cm2 V–1 s–1 under ambient conditions but also excellent operational and thermal stabilities up to 300 °C, whereas the parent and the hexyl derivative were less stable against the thermal treatments at high temperatures. The high mobility observed for the DPh-BBTNDT-based OTFTs can be correlated to the interactive packing structure in the bulk single crystal and thin film state of DPh-BBTNDT, which corroborates the existence of the well-balanced two-dimensional electronic structure in the solid state. With these excellent device characteristics, it can be concluded that DPh-BBTNDT is a promising and practical vapor-processable organic semiconductor, which can afford thermally, operationally, and environmentally stable OTFTs as well as high mobility.
通过开发双[1]苯并噻吩[2,3-d;2',3'-d']萘并[2,3-b;6,7-b']二噻吩(BBTNDT)骨架的有效合成路线,我们成功合成了2位和10位带有苯基(DPh-BBTNDT)或正己基(C6-BBTNDT)的新型BBTNDT衍生物。其气相沉积薄膜的表征表明,根据所引入的取代基,它们的 HOMO 能级略有变化,并且 DPh-BBTNDT 的 HOMO 能级约为 100%。 5.3 eV 被认为是环境条件下稳定的有机半导体。事实上,基于 DPh-BBTNDT 的 OTFT 不仅在环境条件下表现出高达 7.0 cm2 V–1 s–1 的高迁移率,而且在高达 300 °C 的温度下也表现出优异的操作和热稳定性,而母体和己基衍生物在高温下热处理稳定性较差。基于 DPh-BBTNDT 的 OTFT 所观察到的高迁移率可以与 DPh-BBTNDT 块状单晶和薄膜状态下的相互作用堆积结构相关,这证实了在 DPh-BBTNDT 中存在良好平衡的二维电子结构。固态。凭借这些优异的器件特性,可以得出结论,DPh-BBTNDT是一种有前途且实用的可气相加工有机半导体,它可以提供热、操作和环境稳定的OTFT以及高迁移率。