1,8-Substituted Pyrene Derivatives for High-Performance Organic Field-Effect Transistors
作者:Xiaojie Gong、Chaoyue Zheng、Xingcui Feng、Yihong Huan、Jiewei Li、Mingdong Yi、Zhenqian Fu、Wei Huang、Deqing Gao
DOI:10.1002/asia.201801408
日期:2018.12.18
the application of pyrene derivatives as organic semiconductors, but 1,8‐subsituted pyrene semiconductors are less well‐developed. Two p‐type 1,8‐substituted pyrene derivatives were synthesized that were composed of a pyrene core, thiophene or bithiophene arms, and end‐capped octyl chains. These structures were not completely symmetrical and the dihedral angles between the pyrene core and the adjacent
the衍生物作为有机半导体的应用已有许多报道,但1,8取代的pyr半导体发展较差。合成了两个p型1,8-取代的pyr衍生物,它们由a核,噻吩或联噻吩臂和封端的辛基链组成。这些结构不是完全对称的,并且core核与相邻的噻吩单元之间的二面角具有大约两个度的差。这些材料的场效应性能已在各种介电表面上进行了测试。在SiO 2(PS处理的SiO 2)上具有旋涂聚苯乙烯层的两种材料的性能均优于在SiO 2上具有十八烷基三氯硅烷自组装单层的材料的性能(OTS处理的SiO 2),主要归因于低漏电和高电容PS膜上存在大晶粒。含噻吩的化合物在PS处理的SiO 2上的空穴迁移率高达0.18 cm 2 V -1 s -1,这是含双噻吩化合物的空穴迁移率的45倍,这归因于较低的位阻,较高的结晶度和晶粒大。