| 37300-76-8

• 分子结构分类: 有机化合物
• CAS: 37300-76-8
• 化学式: F₂Si
• 分子量: 66.0823
• InChiKey: WPLNUGDSAZHARN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.46
• 重原子数：
  3.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  在 Xe 作用下， 生成 difluorosilylene
  参考文献：
  名称：

  Electron impact ionization cross sections of SiF₂

  摘要：

  Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV. A fast (3 keV) neutral beam of SiF2 is formed by charge transfer neutralization of SiF+2 with Xe; it is primarily in the ground electronic state with about 10% in the metastable first excited electronic state (ã 3B1). The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF+2 is 1.38±0.18 Å2. Formation of SiF+ is the major process with a cross section at 70 eV of 2.32±0.30 Å2. The cross section at 70 eV for formation of the Si fragment ion is 0.48±0.08 Å2. Ion pair production contributes a significant fraction of the positively charged fragment ions.

  DOI：

  10.1063/1.454837
• 作为产物：
  描述：

  difluorosilylene 生成 fluorosilicon(1+) 、 、 硅烷
  参考文献：
  名称：

  Electron impact ionization cross sections of SiF₂

  摘要：

  Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV. A fast (3 keV) neutral beam of SiF2 is formed by charge transfer neutralization of SiF+2 with Xe; it is primarily in the ground electronic state with about 10% in the metastable first excited electronic state (ã 3B1). The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF+2 is 1.38±0.18 Å2. Formation of SiF+ is the major process with a cross section at 70 eV of 2.32±0.30 Å2. The cross section at 70 eV for formation of the Si fragment ion is 0.48±0.08 Å2. Ion pair production contributes a significant fraction of the positively charged fragment ions.

  DOI：

  10.1063/1.454837

文献信息

• Translational and internal energy effects in reactions of O+ and O+2 with SiF4
  作者：Ellen R. Fisher、P.B. Armentrout

  DOI：10.1016/0009-2614(91)87082-m

  日期：1991.5

  as a function of kinetic energy for reaction of SiF4 with O+(4S) and O+2 (2Πg, ν = O). Reactions of excited O+2 ions are also examined and are found to react more efficiently than ground state ions. The major reactions are dissociative charge transfer processes, although O+ also reacts to form OF + SiF+3 efficiently and O+2 reacts to form minor amounts of SiOF+x (x = 1−3).

  引导离子束技术被用于测量的横截面为动能为的SiF的反应的功能4为O +（4 S）和O + 2（2 Π克，ν= O）。还检查了激发的O + 2离子的反应，发现它们比基态离子更有效地反应。主要的反应是解离的电荷转移过程，尽管O +也有效地反应形成OF + SiF + 3，O + 2反应而形成少量的SiOF + x（x = 1-3）。
• Reactions of Ar⁺, Ne⁺, and He⁺with SiF₄from thermal energy to 50 eV c.m.
  作者：M. E. Weber、P. B. Armentrout

  DOI：10.1063/1.456016

  日期：1989.2.15

  Guided ion-beam techniques are used to measure the cross sections for reaction of SiF4 with Ar+, Ne+, and He+ from thermal to 50 eV. Charge transfer followed by loss of F atoms are the sole processes observed. All SiF+x (x=0–4) products are observed, except for SiF+4 from reaction with Ne+ and He+, and Si+ from reaction with Ar+. At high energies, the dominant products are SiF+3 in the Ar system, and SiF+ in both the Ne and He systems. There is some evidence in the Ne system for an excited state of SiF+3 at 5.7 eV. In the Ar+ and Ne+ reactions, the observed energetics are consistent with literature thermochemistry, but with He+, reaction barriers are observed. A value of ΔH0f,298 (SiF+3)=−30.1±0.9 kcal/mol is derived, which is in agreement with previous values but is much more precise. The observed product distributions and energetics are explained by consideration of the potential energy surfaces and the difference in ionization potentials of the rare gases. Finally, the relationships of these reactions to plasma deposition and etching are discussed.
• Electron‐impact ionization cross sections of the SiF₃ free radical
  作者：Todd R. Hayes、Randy J. Shul、Frank A. Baiocchi、Robert C. Wetzel、Robert S. Freund

  DOI：10.1063/1.454836

  日期：1988.10

  Absolute cross sections for electron-impact ionization of the SiF3 free radical from threshold to 200 eV are presented for formation of the parent SiF+3 ion and the fragment SiF+2, SiF+, and Si+ ions. A 3 keV beam of SiF3 is prepared by near-resonant charge transfer of SiF+3 with 1,3,5-trimethylbenzene. The beam contains only ground electronic state neutral radicals, but with as much as 1.5 eV of vibrational energy. The absolute cross section for formation of the parent ion at 70 eV is 0.67±0.09 Å2. At 70 eV the formation of SiF+2 is the major process, having a cross section 2.51±0.02 times larger than that of the parent ion, while the SiF+ fragment has a cross section 1.47±0.08 times larger than the parent. Threshold measurements show that ion pair dissociation processes make a significant contribution to the formation of positively charged fragment ions.
• Experimental and Theoretical Studies of SiF<i>_n</i>(CO)₂⁺ Cations with <i>n</i> = 2 and 3:  A Search for Pentacoordinate Cationic Silicon
  作者：A. E. Ketvirtis、V. I. Baranov、A. C. Hopkinson、D. K. Bohme

  DOI：10.1021/jp970979j

  日期：1997.9.1

  The addition of carbon monoxide to the fluorosilicon cations SiF+, SiF2.+, and SiF3+ has been investigated in helium buffer gas at (294 +/- 3) K and (0.35 +/- 0.01) Torr using a selected-ion flow tube (SIFT) apparatus. The monofluorosilicon cation was found to be unreactive toward CO, whereas both the difluoro- and trifluorosilicon cations consecutively added two CO molecules. Molecular orbital calculations, using density functional theory (DFT) performed at the B-LYP/6-31G(d,p) level, showed that the lowest-energy isomer on the SiF3(CO)(2)(+) potential energy surface has a trigonal bipyramidal structure in which a pentacoordinate Si atom is surrounded by two axial CO ligands (bonded through C) and three equatorial F substituents. he ion at the global minimum on the SiF2(CO)(2)(.+) potential energy surface has a structure between that of a distorted tetrahedron and a trigonal bipyramid in which both CO molecules are axial and the two fluorine atoms and the unpaired electron are equatorial. Other low-lying isomers have trigonal bipyramidal structures in which one or both CO ligands are bonded to silicon through oxygenn or have tetrahedral structures in which an F3SiCO+ or F2SiOC.+ ion is solvated by CO. A multicollision-induced dissociation (CID) study of the product SiF3(CO)(2)(+) indicated the presence of at least three structural isomers, whereas the CID of SiF2(CO)(2)(.+) was less conclusive.