fluorosilicon(1+) | 12518-09-1

• 英文名称: fluorosilicon(1+)
• CAS: 12518-09-1
• 化学式: FSi
• 分子量: 47.0839
• InChiKey: WZSRQTCBMBRHIN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.04
• 重原子数：
  2.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为产物：
  描述：

  二氟代氙 、 硅烷 生成 fluorosilicon(1+)
  参考文献：
  名称：

  激光汽化/FTMS 作为硅表面反应性的探针

  摘要：

  摘要 将硅表面暴露于多种反应气体，然后进行激光汽化，除了会产生清洁硅表面典型的硅簇离子 (Si+n) 分布之外，还会产生异常离子。这些离子的出现与硅表面反应有关。已经研究了暴露于气体 NH3、XeF2、CF3I、O2、NO、CH3OH、H2O、C2H4、D2 和 CH4 后硅的激光汽化。对于某些反应气，测量了作为暴露函数的产物离子相对强度的变化。将激光汽化/傅里叶变换质谱 (FTMS) 的结果与使用其他实验技术的硅表面反应研究以及一些二次离子质谱 (SIMS) 结果进行比较。

  DOI：

  10.1016/0039-6028(88)90597-3

文献信息

• Infrared diode laser spectroscopy of the SiF+ ion
  作者：Yasunobu Akiyama、Keiichi Tanaka、Takehiko Tanaka

  DOI：10.1016/s0009-2614(89)87352-x

  日期：1989.2

  The infrared diode laser spectrum of the SiF+ ion generated in a SiF4 plasma has been observed. Twenty-one and ten lines in the R and P branches, respectively, of the fundamental band and three R branch lines in the v=2←1 hot band were recorded using the hollow cathode discharge modulation technique. A sharp decrease of the intensity caused by the magnetic field, which is characteristic of ion lines

  已经观察到在SiF 4等离子体中产生的SiF +离子的红外二极管激光光谱。使用空心阴极放电调制技术分别记录了基带的R和P分支中的21条线和10条线，以及在v = 2←1热带中记录了3条R分支线。观察到由离子线所特有的磁场引起的强度急剧下降。带起源是1040.4833±0.0006和±1030.59080.0005厘米-1为基波和热轧带，分别从其中ω Ê = 1050.3757±0.0013厘米-1和ω Ë χ Ê = 4.9462±0.0004厘米-1派生。基态和第一激发振动状态的旋转常数分别为0.637010±0.000015和0.632311±0.000015 cm -1，基态的离心变形常数为（0.9466±0.0046）×10 -6 cm -1。平衡键长度为r e = 1.52652±0.00008Å。
• Translational and internal energy effects in reactions of O+ and O+2 with SiF4
  作者：Ellen R. Fisher、P.B. Armentrout

  DOI：10.1016/0009-2614(91)87082-m

  日期：1991.5

  as a function of kinetic energy for reaction of SiF4 with O+(4S) and O+2 (2Πg, ν = O). Reactions of excited O+2 ions are also examined and are found to react more efficiently than ground state ions. The major reactions are dissociative charge transfer processes, although O+ also reacts to form OF + SiF+3 efficiently and O+2 reacts to form minor amounts of SiOF+x (x = 1−3).

  引导离子束技术被用于测量的横截面为动能为的SiF的反应的功能4为O +（4 S）和O + 2（2 Π克，ν= O）。还检查了激发的O + 2离子的反应，发现它们比基态离子更有效地反应。主要的反应是解离的电荷转移过程，尽管O +也有效地反应形成OF + SiF + 3，O + 2反应而形成少量的SiOF + x（x = 1-3）。
• Reactions of Ar⁺, Ne⁺, and He⁺with SiF₄from thermal energy to 50 eV c.m.
  作者：M. E. Weber、P. B. Armentrout

  DOI：10.1063/1.456016

  日期：1989.2.15

  Guided ion-beam techniques are used to measure the cross sections for reaction of SiF4 with Ar+, Ne+, and He+ from thermal to 50 eV. Charge transfer followed by loss of F atoms are the sole processes observed. All SiF+x (x=0–4) products are observed, except for SiF+4 from reaction with Ne+ and He+, and Si+ from reaction with Ar+. At high energies, the dominant products are SiF+3 in the Ar system, and SiF+ in both the Ne and He systems. There is some evidence in the Ne system for an excited state of SiF+3 at 5.7 eV. In the Ar+ and Ne+ reactions, the observed energetics are consistent with literature thermochemistry, but with He+, reaction barriers are observed. A value of ΔH0f,298 (SiF+3)=−30.1±0.9 kcal/mol is derived, which is in agreement with previous values but is much more precise. The observed product distributions and energetics are explained by consideration of the potential energy surfaces and the difference in ionization potentials of the rare gases. Finally, the relationships of these reactions to plasma deposition and etching are discussed.
• Energetics and dynamics in the reaction of Si⁺ with SiF₄. Thermochemistry of SiF_<i>x</i> and SiF⁺_<i>x</i> (<i>x</i>=1, 2, 3)
  作者：M. E. Weber、P. B. Armentrout

  DOI：10.1063/1.454387

  日期：1988.6

  The title reaction is studied using guided ion beam mass spectrometry. Absolute reaction cross sections are measured as a function of kinetic energy from thermal to 40 eV, and three endothermic product channels are observed. The dominant SiF++SiF3 channel is only slightly endothermic, while the SiF+3 +SiF and SiF+2 +SiF2 channels have much higher thresholds. The SiF+3 cross section magnitude is about half that of SiF+, while the SiF+2 cross section is an order of magnitude smaller than that of SiF+. A second feature which appears in the SiF+2 cross section is due to dissociation of SiF+3 . There is evidence that SiF+ and SiF+3 are produced via a direct mechanism. Competition between these two channels is interpreted in terms of molecular orbital correlations and qualitative potential energy surfaces. One surface is found to correlate only with the SiF+3 +SiF channel, while another correlates diabatically with this channel and adiabatically with the SiF++SiF3 channel. Competition on this latter surface has an energy dependence which is consistent with the Landau–Zener model. Reaction thresholds are analyzed to yield 298 K heats of formation for SiFx and SiF+x species. From an evaluation of these and literature values, we recommend the following values: ΔH0f(SiF+) =170.4±2.2 kcal/mol, IP(SiF)=7.54±0.16 eV, ΔH0f (SiF3)=−258±3 kcal/mol, and IP(SiF3)=9.99±0.24 eV.
• Electron impact ionization cross sections of SiF₂
  作者：Randy J. Shul、Todd R. Hayes、Robert C. Wetzel、Frank A. Baiocchi、Robert S. Freund

  DOI：10.1063/1.454837

  日期：1988.10

  Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV. A fast (3 keV) neutral beam of SiF2 is formed by charge transfer neutralization of SiF+2 with Xe; it is primarily in the ground electronic state with about 10% in the metastable first excited electronic state (ã 3B1). The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF+2 is 1.38±0.18 Å2. Formation of SiF+ is the major process with a cross section at 70 eV of 2.32±0.30 Å2. The cross section at 70 eV for formation of the Si fragment ion is 0.48±0.08 Å2. Ion pair production contributes a significant fraction of the positively charged fragment ions.