Trimethylsilyl <I>o</I>-Xylenyl-Substituted Fullerene Bis-Adduct as Electron Acceptor for Solution-Processed Polymer Solar Cells
作者:Hee Un Kim、On You Park、Jong Baek Park、Do-Hoon Hwang
DOI:10.1166/jnn.2016.13178
日期:2016.10.1
A new trimethylsilyl o-xylenyl-substituted fullerene bis-adduct (TMS_OXCBA) was synthesized as an electron acceptor for solution-processed polymer solar cells (PSCs) via a Diels-Alder reaction. The Stern-Volmer quenching constant (K sv) for the device containing poly(3-hexylthiophene) (P3HT) as the fluorophore and TMS_OXCBA as the quencher was 8.51 × 103 M−1, which correlated with the binding affinity of P3HT and TMS_OXCBA. The measured lowest unoccupied molecular orbital (LUMO) energy level of TMS_OXCBA was −3.53 eV and the electron mobility value obtained for the P3HT:TMS_OXCBA blend film was 1.94 × 10−4 cm2 V−1 S−1. Photovoltaic devices were fabricated using P3HT as the electron donor and TMS_OXCBA as the electron acceptor. The highest power conversion efficiency (PCE) value observed for P3HT:TMS_OXCBA was 2.53% with an open-circuit voltage (V oc) of 0.84 V, a short-circuit current density (J sc) of 7.22 mA cm−2, and a fill factor (FF) of 0.42 under AM 1.5G illumination of 100 mW cm−2.
通过 Diels-Alder 反应合成了一种新的三甲基硅基邻二甲苯基取代富勒烯双加成物 (TMS_OXCBA),作为溶液法聚合物太阳能电池 (PSC) 的电子受体。以聚(3-己基噻吩)(P3HT)为荧光体、TMS_OXCBA 为淬灭剂的器件的斯特恩-沃尔默淬灭常数(K sv)为 8.51 × 103 M-1,这与 P3HT 和 TMS_OXCBA 的结合亲和力相关。测得的 TMS_OXCBA 最低未占分子轨道(LUMO)能级为 -3.53 eV,P3HT:TMS_OXCBA 混合薄膜的电子迁移率值为 1.94 × 10-4 cm2 V-1 S-1。利用 P3HT 作为电子给体,TMS_OXCBA 作为电子受体,制造出了光伏设备。在 100 mW cm-2 的 AM 1.5G 照明下,P3HT:TMS_OXCBA 的最高功率转换效率 (PCE) 值为 2.53%,开路电压 (V oc) 为 0.84 V,短路电流密度 (J sc) 为 7.22 mA cm-2,填充因子 (FF) 为 0.42。