[4-(5-甲基-1H-四唑-1-基)苯基]乙酸 | 799262-38-7

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 唑类
• 中文名称: [4-(5-甲基-1H-四唑-1-基)苯基]乙酸
• 中文别名: [4-(5-甲基四唑-1-基)苯基]乙酸
• 英文名称: [4-(5-Methyl-tetrazol-1-yl)-phenyl]-acetic acid
• 英文别名: 2-[4-(5-methyltetrazol-1-yl)phenyl]acetic acid
• CAS: 799262-38-7
• 化学式: C₁₀H₁₀N₄O₂
• mdl: MFCD05237211
• 分子量: 218.21
• InChiKey: JFLVCYOJCVLGDE-UHFFFAOYSA-N

物化性质

• 沸点：
  450.3±47.0 °C(Predicted)
• 密度：
  1.40±0.1 g/cm3(Predicted)
• 溶解度：
  20.3 [ug/mL]

计算性质

• 辛醇/水分配系数(LogP)：
  1.1
• 重原子数：
  16
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.2
• 拓扑面积：
  80.9
• 氢给体数：
  1
• 氢受体数：
  5

安全信息

• 危险等级：
  IRRITANT
• 海关编码：
  2933990090

文献信息

• Substituted Piperazines as CB1 Antagonists
  申请人：Gilbert Eric J.

  公开号：US20100029607A1

  公开（公告）日：2010-02-04

  Compounds of Formula (I): or pharmaceutically acceptable salts, solvates, or esters thereof, are useful in treating diseases or conditions mediated by CB 1 receptors, such as metabolic syndrome and obesity, neuroinflammatory disorders, cognitive disorders and psychosis, addiction (e.g., smoking cessation), gastrointestinal disorders, and cardiovascular conditions.

  式(I)的化合物，或其药学上可接受的盐、溶剂合物或酯类，可用于治疗由CB1受体介导的疾病或症状，例如代谢综合征和肥胖症、神经炎性疾病、认知障碍和精神病、成瘾（例如戒烟）、胃肠疾病和心血管病症。
• Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
  申请人：BASF SE

  公开号：US10899945B2

  公开（公告）日：2021-01-26

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

  一种化学机械抛光(CMP)组合物(Q)，用于对包含(i)钴和/或(ii)钴合金和(iii)Ti N和/或TaN的基体(S)进行化学机械抛光，其中所述CMP组合物(Q)包含 (E) 无机颗粒 (F) 至少一种包含氨基和酸基(Y)的有机化合物，其中所述化合物包含n个氨基和至少n+1个酸性质子，其中n为整数≥1。(G) 至少一种氧化剂，其用量为 0.2 至 2.5 wt.- %，以混合物总重量为基准。(H) 一种水介质，其中 CMP 组合物 (Q) 的 pH 值大于 6 但小于 9。
• USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
  申请人：BASF SE

  公开号：EP3334794B1

  公开（公告）日：2020-02-19
• CHEMICAL MECHANICAL POLISHING COMPOSITION
  申请人：BASF SE

  公开号：US20200299547A1

  公开（公告）日：2020-09-24

  The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.
• US7700597B2
  申请人：——

  公开号：US7700597B2

  公开（公告）日：2010-04-20