N-octyl-N,N,N-trimethylammonium decanoate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: N-octyl-N,N,N-trimethylammonium decanoate
• 英文别名: Decanoate;trimethyl(octyl)azanium
• 化学式: C₁₀H₁₉O₂*C₁₁H₂₆N
• 分子量: 343.594
• InChiKey: QXEUBRSAPKLTKF-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  4.93
• 重原子数：
  24
• 可旋转键数：
  14
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.95
• 拓扑面积：
  40.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  N,N-二甲基正辛胺 以 甲醇 为溶剂， 反应 49.0h， 生成 N-octyl-N,N,N-trimethylammonium decanoate
  参考文献：
  名称：

  Scalable Synthesis of Salt-free Quaternary Ammonium Carboxylate Catanionic Surfactants

  摘要：

  DOI：

  10.17344/acsi.2019.5413

文献信息

• COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
  申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

  公开号：EP1568744A1

  公开（公告）日：2005-08-31

  A composition for film formation from which a porous film excelling in dielectric characteristics, adherence, coating film uniformity and mechanical strength and realizing reduced moisture absorption can be prepared; a porous film and a process for producing the same; and a highly reliable semiconductor device of high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, obtained by adding to a siloxane polymer at least one quaternary ammonium salt represented by the general formula: [(R<1>)4N]<+>[R<2>X]<-> (1), or Hk[(R<1>)4N]m<+>Y (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C-CO2, NO3 or NO2; k is 0 or 1; each of m and n is 1 or 2; when n=1, k=0 and m=1; and when n=2, either k=0 and m=2, or k=1 and m=1.

  一种可制备介电特性、附着力、涂膜均匀性和机械强度优异的多孔膜并实现降低吸湿性的成膜用组合物；一种多孔膜及其生产工艺；以及一种含有该多孔膜的高性能高可靠性半导体器件。特别是一种用于形成多孔薄膜的组合物，它是通过向硅氧烷聚合物中添加至少一种由通式表示的季铵盐而获得的：[(R)4N][RX](1)，或 Hk[(R)4N]mY (2)，其中 X 代表 CO2、OSO3 或 SO3；Y 代表 SO4、SO3、CO3、O2C-CO2、NO3 或 NO2；k 为 0 或 1；m 和 n 各为 1 或 2；当 n=1 时，k=0，m=1；当 n=2 时，或者 k=0，m=2，或者 k=1，m=1。
• COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE
  申请人：Ogihara Tsutomu

  公开号：US20070135565A1

  公开（公告）日：2007-06-14

  Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R 1 ) 4 N] + [R 2 X] − ( 1 ) H k [(R 1 ) 4 N] m + Y n− ( 2 ) wherein X represents CO 2 , OSO 3 or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.
• Scalable Synthesis of Salt-free Quaternary Ammonium Carboxylate Catanionic Surfactants
  作者：Žiga Medoš、Miha Virant、Urša Štanfel、Boštjan Žener、Janez Košmrlj、Marija Bešter-Rogač

  DOI：10.17344/acsi.2019.5413

  日期：——