Transmission of electronic effects via a SiMe2 spacer in 4-mono- and 4,4′-disubstituted diphenyldimethylsilanes: 29Si and 13C NMR spectroscopy and PM3 semi-empirical calculations
作者:Cornelis A. van Walree、Xavier Y. Lauteslager、Andreas M.A. van Wageningen、Jan W. Zwikker、Leonardus W. Jenneskens
DOI:10.1016/0022-328x(95)05473-3
日期:1995.6
13C NMR studies were performed on series of 4-substituted phenyltrimethylsilanes and 4-substituted and 4,4′-disubstituted diphenyldimethylsilanes. Within each series linear relationships are found between the chemicalshifts and (a) the Hammett substituentconstants σp and (b) the PM3-calculated total atomic charges. It is inferred that the SiMe2 σ-type spacer weakly mediates substituenteffects in
对一系列4-取代的苯基三甲基硅烷和4-取代的和4,4'-二取代的二苯基二甲基硅烷进行了约29 Si和13 C NMR研究。在每个系列的线性关系被化学位移和(a)的哈米特取代基常数之间发现σ p和(b)的PM3计算总原子电荷。据推断,所述森达2 σ型分隔弱介导通过键偏振机构处于基态的取代基的影响。与4-取代的和4,4'-二取代的二苯基甲烷的可用数据进行的比较表明,SiMe 2基团比CH 2基团更好地传递电子效应。
Conductive Molecular Silicon
作者:Rebekka S. Klausen、Jonathan R. Widawsky、Michael L. Steigerwald、Latha Venkataraman、Colin Nuckolls
DOI:10.1021/ja211677q
日期:2012.3.14
Bulk silicon, the bedrock of information technology, consists of the deceptively simple electronic structure of just Si-Si σ bonds. Diamond has the same lattice structure as silicon, yet the two materials have dramatically different electronic properties. Here we report the specific synthesis and electrical characterization of a class of molecules, oligosilanes, that contain strongly interacting Si-Si