RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
申请人:Momose Hikaru
公开号:US20090198065A1
公开(公告)日:2009-08-06
To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.
In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K
1
and K
2
each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L
1
and L
2
each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M
1
, M
2
and M
3
each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y
1
and Y
2
each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R
1
represents H or a methyl group.
提供一种抗蚀聚合物,其由一个具有结构式(1)或(2)所表示的酸分解单元作为结构单元,能够在DUV准分子激光微影或类似工艺中表现出小的线边粗糙度并产生少量缺陷。在式(1)和(2)中,n表示2至24的整数;J表示单键或二价碳氢基团,当n=2时可以具有取代基/杂原子,或者当n≥3时可以表示n价碳氢基团,可以具有取代基/杂原子;E表示聚合终止剂、链转移剂或聚合引发剂的残基;K1和K2分别表示至少选择自烷基、环烷基、氧烷基、芳烃、二价噻唑环、二价噁唑环和二价咪唑环中的至少一种;L1和L2分别表示至少选择自—C(O)O—、—C(O)—和—OC(O)—中的至少一种;M1、M2和M3分别表示至少选择自烷基、环烷基、氧烷基和芳烃中的至少一种;Y、Y1和Y2分别表示酸分解键;k1、k2、l1、l2、m1、m2和m3分别表示0或1;R1表示H或甲基基团。